2N5428A MECHANICAL DATA Dimensions in mm 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 3.86 (0.145) rad. 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) MEDIUM POWER NPN SILICON TRANSISTOR Designed for switching and wide - band amplifier applications 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 Package. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) VCEO Collector - emitter voltage 80 V VCB Collector - base voltage 80 V VEB Emitter - base voltage 6V IC Collector current – continuous 7A IB Base current 1A PD Total device dissipation at Tcase= 25°C Derate above 25°C Tj Operating and Tstj storage junction temperature range RqJC Thermal resistance, junction to case. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 40 W 228 mW / °C -65 to 200°C 4.37 °C / W Prelim. 7/93 2N5428A OFF CHARACTERISTICS Parameter BVCEO (sus) Collector - Emitter sustaining voltage Test Conditions Min Max Unit IC = 50mA , IB = 0 80 - V ICBO Collector cutoff current VCE = 75V , IB = 0 - 100 mA ICEX Collector cutoff current VCE = 75V , VEB(off) = 1.5V - 10 mA VCE = 75V , VEB(off) = 1.5V , TC = 150°C - 1.0 mA ICBO Collector cutoff current VCB = Rated VCB ' IE = 0 10 mA IEBO Emitter cutoff current VBE = 6V, IC = 0 100 mA Min Max Unit IC = 500mA , VCE = 2V 60 - IC = 2A , VCE = 2V 30 120 IC = 5A , VCE = 2V 30 ON CHARACTERISTICS Parameter hFE VCE(sat) VBE(sat) DC Current gain (1) Test Conditions Collector - Emitter IC = 2A , IB = 0.2A 0.7 saturation voltage IC = 7A , IB = 0.7A 1.2 Base - Emitter IC = 2A , IB = 0.2A 1.2 saturation voltage IC = 7A , IB = 0.7A 2.0 — V V DYNAMIC CHARACTERISTICS Parameter fT Current gain bandwidth product Test Conditions (IC = 500 mA, VCE = 10V, f = 10 MHz) Min Max Unit 30 - MHz Cob Output capacitance (VCB = 10V, IE = 0, f = 100 kHz) - 250 pF Cib Input capacitance (VBE = 2V, IC = 0, f = 100 kHz) - 1000 pF Min Max Unit SWITCHING CHARACTERISTICS Parameter Test Conditions td tr Delay time (VCC = 40V, VEB(off) = 3V - 100 ns Rise time IC = 2A, IB1 = 200mA) - 100 ns ts tf Storage time (VCC = 40V, IC = 2A - 2.0 ms Fall time IB1 = IB2 = 200mA) - 200 ns (1) Pulse Test: Pulse width = 300 ms, Duty Cycle = 2.0 % Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/93