SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5320 • Low VCE(sat), hFE 30-130 (@VCE=4V, IC=0.5A) • Hermetic TO-39 Metal package. • Ideally Suited For Medium Power Amplifier And Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 100V 75V 7V 2A 1.0A 1.0W 5.71mW/°C 7W 40mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA RθJC Min. Typ. Max. Units Thermal Resistance, Junction To Ambient 175 °C/W Thermal Resistance, Junction To Case 25 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8582 Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5320 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols (1) V(BR)CEO ICEX Parameters Test Conditions Collector-Emitter Breakdown Voltage IC = 10mA IB = 0 VCE = 100V VBE = -1.5V VCE = 70V VBE = -1.5V Collector Cut-Off Current Min. Typ 75 TA = 150°C IEBO hFE (1) VCE(sat) VBE(on) (1) 100 µA 5 mA 100 µA IC = 0 IC = 500mA VCE = 4V 30 IC = 1.0A VCE = 2V 10 Collector-Emitter Saturation Voltage IC = 500mA IB = 50mA 0.5 Base-Emitter Voltage IC = 500mA VCE = 4V 1.1 IC = 50mA VCE = 4V Forward-current transfer ratio Units V VEB = 7V Emitter Cut-Off Current (1) Max. 130 V DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio ton Turn-On Time toff Turn-Off Time 5 f = 10MHz IC = 500mA VCC = 30V 80 IB1 = 50mA IC = 500mA ns VCC = 30V 800 IB1 = - IB2 = 50mA Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8582 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5320 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 8582 Issue 1 Page 3 of 3