PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEO VCBO VEBO ICM IB PD TJ Tstg Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Peak Collector Current Base Current TC = 25°C Total Power Dissipation at De-rate Linearly Above 25°C Junction Temperature Range Storage Temperature Range BDX66 -60V -60V 66A 66B 66C -80V -100V -120V -80V -100V -120V -5V -20A -0.25A 150W 0.855 W/°C -55 to +200°C -55 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. Units 1.17 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8760 Issue 1 Page 1 of 3 PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols (1) V(BR)CEO ICEO Parameters Collector-Emitter Breakdown Voltage Collector Cut-Off Current Test Conditions IC = -100mA VCE =0.5×VCEO(max) IE = 0 Collector-Base Cut-Off Current ICBO IE = 0 TJ =200°C IEBO Min. BDX66 -60 BDX66A -80 BDX66B -100 BDX66C -120 Typ. -1.0 VCB =VCBO(max) BDX66 VCB = -50V BDX66A VCB = -60V BDX66B VCB = -70V BDX66C -1.0 mA -5 Emitter Cut-Off Current VEB = -5V IC = 0 -5 Collector-Emitter Saturation Voltage IC = -10A IB = -40mA -2 VBE Base-Emitter Voltage IC = -10A VCE = -3V -2.5 VF Diode Forward Voltage IF = 10A (1) VCE(sat) (1) hFE Forward-current transfer ratio V 2 IC = -1.0A (1) Units V IB =0 VCB = -40V Max. VCE = -3V IC = -10A IC = -16A 2000 - 1000 1000 DYNAMIC CHARACTERISTICS hfe Magnitude of common emitter small-signal shortcircuit forward current transfer ratio Cobo Output Capacitance ton Turn-On Time IC = -10A toff Turn-Off Time -IB1 = IB2 = 40mA IC = -5A VCE = -3V 50 - 300 pF f = 1.0MHz VCB = -10V IE = 0 f = 1.0MHz VCC = -12V 1.0 3.5 µS Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8760 Issue 1 Page 2 of 3 PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO-3 (TO-204AA) Pin 1 – Base Pin 2 – Emitter Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Case – Collector Website: http://www.semelab-tt.com Document Number 8760 Issue 1 Page 3 of 3