SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3440C3 • High Voltage • Hermetic Ceramic Surface Mount Package. • Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current – Continuous Base Current TA = 25°C Total Power Dissipation at 300V 250V 7V 1.0A 0.5A 500mW 2.9mW/°C -65 to +200°C -65 to +200°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJA RθJSP Min. Typ. Max. Units Thermal Resistance, Junction To Ambient 350 °C/W Thermal Resistance, Junction To Solder Pads 120 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8877 Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3440C3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions ICEO Collector Cut-Off Current VCE = 200V IB = 0 2 VCB = 300V IE = 0 5 VCB = 250V IE = 0 2 TA = 150°C 10 ICBO Collector Cut-Off Current Min. Typ Max. ICEX Collector Cut-Off Current VCE = 300V VBE = -1.5V 5 IEBO Emitter Cut-Off Current VEB = 7V IC = 0 10 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 50mA IB = 4mA 0.5 IC = 50mA IB = 4mA 1.3 IC = 0.2mA VCE = 10V 10 IC = 2mA VCE = 10V 30 IC = 20mA VCE = 10V 40 TA = -55°C 15 (1) VCE(sat) VBE(sat) hFE (1) (1) Forward-current transfer ratio Units µA V 160 DYNAMIC CHARACTERISTICS hfe Small signal forward-current transfer ratio | hfe | Magnitude of CommonEmitter Small-Signal ShortCircuit forward Current, Transfer Ratio Cobo Output Capacitance Cibo Input Capacitance ton Turn-On Time toff Turn-Off Time IC = 5mA VCE = 10V 25 - f = 1.0KHz IC = 10mA VCE = 10V 3 f = 5MHz VCB = 10V IE = 0 f = 1.0MHz VEB = 5V IC = 0 f = 1.0MHz IC = 20mA VCC = 200V IB1 = 2mA IC = 20mA VCC = 200V IB1 = - IB2 = 2mA 15 MHz 10 pF 75 pF 1.0 µs 10 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8877 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3440C3 MECHANICAL DATA Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 rad. (0.009) 3 4 1.02 ± 0.20 (0.04 ± 0.008) 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 2 1 0.23 min. (0.009) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 (MO-041BA) Underside View Pad 1 – Collector Pad 2 – N/C Pad 3 – Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pad 4 - Emitter Website: http://www.semelab-tt.com Document Number 8877 Issue 1 Page 3 of 3