SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 100V 100V 5V 12A 0.2A 150W 1.00W/°C -55 to +175°C -55 to +175°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 1.00 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8812 Issue 1 Page 1 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions ICEO Collector-Emitter Cut-Off Current VCE = 50V ICEX Collector=Emitter Cut-Off Current IEBO Emitter-Base Cut-Off Current Collector-Emitter Breakdown Voltage Base-Emitter Voltage (nonsaturated) VEB = 5V IC = 6A VCE = 3V Base-Emitter Saturation Voltage IC = 12A IB = 120mA 4 IC = 12A IB = 120mA 3 IC = 6A IB = 24mA 2 TC = 150°C 2 (1) V(BR)CEO VBE VBE(sat) (1) (1) VCE(sat) hFE (1) Collector-Emitter Saturation Voltage Forward-Current Transfer Ratio VCE = 100V Min. Max. Units 1.0 mA VBE = 1.5V 10 µA TC = 150°C 5 mA 2 mA IC = 100mA 100 2.8 IC = 1.0A VCE = 3V 1000 IC = 6A VCE = 3V 1000 TC = -55°C 300 VCE = 3V 150 IC = 12A Typ V 18000 DYNAMIC CHARACTERISTICS hfe Magnitude of CommonEmitter Small Signal Forward Current Transfer Ratio Small Signal ForwardCurrent Transfer Ratio Cobo Output Capacitance ton Turn-On Time |hfe| toff Turn-Off Time IC = 5A VCE = 3V 10 f = 1.0MHz IC = 5A VCE = 3V f = 1.0kHz f = 1.0MHz IE = 0 IC = 5A 1000 VCB = 10V VCC = 30V 300 pF 2 IB = 20mA IC = 5A 250 µs VCC = 30V 10 IB = 20mA Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8812 Issue 1 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 22.23 (0.875) max. 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 2 Case (3) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8812 Issue 1 Page 3 of 3