2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) DESCRIPTION Designed for use in Industrial - Military Power Amplifier and Switching Circuit Applications 7.92 (0.312) 12.70 (0.50) TO-3 Package (TO-204AA) Pin 1 – Base Pin 2 – Emitter Case – Collector ABSOLUTE MAXIMUM RATINGS(TCASE = 25°c unless otherwise stated) VCB Collector – Base Voltage 2N6436 2N6437 2N6438 100 80 120 100 140 120 VCEO Collector – Emitter Voltage VEB Emitter – Base Voltage 6.0V IC Collector Current Continuous 25A Peak 50A IB Base Current PD Total Device Dissipation at Tcase = 25°C 10A Derate above 25°C Tstg,Tj Operating and Storage Temperature Range 140W 0.8W/°C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3252 Issue 3 2N6436 2N6437 2N6438 THERMAL DATA Rthj-case Thermal Resistance Junction-case 1.25 Max °C/W ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated) Parameter ICBO IEBO Collector Cut Off Current Emitter Cut Off Current Test Conditions ICEO Collector Cut Off Current Collector Cut off Current hFE* VCE(sat)* Collector Emitter Breakdown Voltage DC Current Gain Collector - Emitter Saturation Voltage Max. Unit 2N6436 10 VCB = 120V IE = 0 2N6437 10 VCB = 140V IE = 0 2N6438 10 µA 100 µA 10 µA VBE (off) =-1.5V TC = 150°C 1.0 mA VCE = 110V 10 µA VBE (off) =-1.5V TC = 150°C 1.0 mA VCE = 130V 10 µA VBE (off) =-1.5V TC = 150°C 1.0 mA VCE = 40V IB = 0 2N6436 50 VCE = 50V IB = 0 2N6437 50 VCE = 60V IB = 0. 2N6438 50 VEB = 6V IC = 0 2N6436 2N6437 2N6436 2N6436 V(BR)CEO* Typ. VCB = 100V IE = 0 VCE = 90V ICEX Min. IC = 50mA 80 IB = 0 2N6437 100 2N6438 120 V VCE =2.0V IC = 0.5A 30 VCE = 2.0V IC = 10A 20 VCE = 2.0V IC = 25A 12 IC = 10A IB = 1.0A 1.0 IC = 25A IB = 2.5A 1.8 IC = 10A IB = 1.0AV 1.8 IC = 25A IB = 2.5A 2.5 IC = 1.0A VCE = 10V VBE(sat)* Base Emitter Saturation Voltage fT Current Gain - Bandwidth Product Cob Output Capacitance tr Rise Time ts Storage VCC = 80V tf Fall Time VBE(off) = 6.0V IB1 = IB2 =1.0A ftest = 10MHz IE = 0A VCE = 10V f = 100kHz VCC = 80V IC = 10A VBE(off) = 6.0V IB1 = 1.0A IC = 10A µA 120 — V MHz 40 700 pF 0.3 1.0 μs 0.25 * Pulse test: Pulse Width ≤ 300μs , Duty Cycle ≤ 2.0% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3252 Issue 3