BUR52 MECHANICAL DATA Dimensions in mm(inches) HIGH CURRENT NPN SILICON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • HIGH PULSE POWER 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) • FAST SWITCHING 3 (case) APPLICATIONS 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) Pin 1 = Base • POWER SWITCHING CIRCUITS • MOTOR CONTROL Pin 2 = Emitter Case = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE= 0V) 350V VCEO Collector – Emitter Voltage (IB= 0V) 250V VEBO Collector – Emitter Voltage (IC= 0V) 10V IC Collector Current 60A ICM Peak Collector Current (tp = 10 ms) 80A IB Base Current 16A Ptot Total Power Dissipation at Tcase ≤ 25°C Tstg, Storage Temperature Tj Max. Operating Junction Temperature 200°C RθJC Junction to Case Thermal Resistance 0.5°C/W 350W -65°C to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5764 Issue 3 BUR52 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Collector - Emitter Breakdown Test Conditions Min. Typ. Max. Unit IC = 200mA IB = 0 250 V IC = 0 IE = 10mA 10 V Current VCE = 250V IB = 0 1.0 ICBO Collector -Base Cut-off Current VCE = 350V IE = 0 0.2 IEBO Emitter–Base Cut-off Current IC = 0 VEB = 7V 0.2 Collector – Emitter IC = 25A IB = 2A 1.0 Saturation Voltage IC = 40A IB = 4A Base – Emitter IC = 25A IB = 2A Saturation Voltage IC = 40A IB = 4A DC Current Gain IC = 5A VCE = 4V 20 IC = 40A VCE = 4V 15 Collector Current VCE = 20V t = 1s ft Transition Frequency IC = 1.0A VCE = 5V 10 16 ton Turn–On Time IB = 4A 0.3 1.0 tf Fall Time IC = 40A IB1 =4A IB2 - 4A VCC = 100V 0.2 0.6 ts Storage Time IC = 40A IB1 =4A IB2 - 4A VCC = 100V 1.2 2 V(BR)CEO* V(BR)EBO ICEO VCE(sat)* VBE(sat)* hFE IS/b Voltage Emitter – Base Breakdown Voltage Collector Emitter Cut-off 2 TC = 125°C Second Breakdown f = 1MHz IC = 40A VCC = 100V 0.7 1.5 1.8 1.5 2 100 mA mA mA V V — A 17.5 MHz μs *Pulsed tp =300μs @< 1% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5764 Issue 3