BUX20 HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTOR MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 DESCRIPTION 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) The BUX20 is a silcon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment. 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO–3 PACKAGE (TO-204AA) PIN 1 — Base PIN 2 — Emitter Case is Collector. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) 160V VCEX Collector – Emitter Voltage (VBE = –1.5V) 160V VCEO Collector – Emitter Voltage (IB = 0) 125V VEBO Emitter – Base Voltage (IC = 0) 7V IC Collector Current 50A ICM Collector Peak Current (tp = 10 ms) 60A IB Base Current 10A Ptot Total Power Dissipation at Tcase ≤ 25°C Tstg Storage Temperature –65 to 200°C TJ Junction Temperature 200°C 350W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3246 Issue 1 BUX20 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus)* Collector - Emitter Sustaining Voltage Test Conditions IC = 200mA Min. Typ. Max. Unit 125 V 7 V VEBO Emitter – BaseVoltage IE = 50mA IC = 0 ICEO Collector Cut-off Current VCE = 100V IB = 0 3 ICEX Collector Cut-off Current VCE = 160V VBE = –1.5V 3 TC = 125°C 12 IEBO Emitter Cut-off Current IC = 0 VEB = 5V 1 Collector – Emitter IC = 25A IB = 2.5A 0.3 0.6 Saturation Voltage IC = 50A IB = 5A 0.55 1.2 IC = 50A IB = 5A 1.35 2 IC = 25A VCE = 2V 20 IC = 50A VCE = 4V 10 Second Breakdown VCE = 40V t = 1s 0.15 Collector Current VCE = 20V t = 1s 17.5 IC = 2A VCE = 15V VCE(sat)* VBE(sat)* hFE* IS/b Base – Emitter Saturation Voltage DC Current Gain fT Transition Frequency ton Turn–On Time ts Storage Time IC = 50A tf Fall Time IB2 = – 5A f = 10MHz IC = 50A IB1 =5A 60 mA mA V V — A 8 MHz 0.4 1.5 IB1 =5A 0.85 1.2 VCC = 60V 0.1 0.3 VCC = 60V mA µs * Pulsed: pulse duration = 300ms, duty cycle ≤ 2% THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction to Case 0.5 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3246 Issue 1