2N5067 MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 NPN SILICON POWER TRANSISTOR FEATURES • LOW SATURATION VOLTAGES • HIGH RELIABILITY 3 (case) • HERMETIC PACKAGE 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) APPLICATIONS • POWER SWITCHING CIRCUITS TO–3(TO204AA) • POWER AMPLIFIER APPLICATIONS PIN 1 — Base PIN 2 — Emitter Case is Collector . ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) 40V VCEO Collector – Emitter Voltage (IB = 0) 40V VEBO Emitter – Base Voltage (IC = 0) 5.0V IC Collector Current Continuous 5A ICM Collector Current Peak 10A IB Base Current 1.0A Ptot Total Power Dissipation at Tcase ≤ 25°C Derate above 25°C 87.5W 0.5 W/°C Tstg, Storage Temperature –65 to 200°C Tj Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6605 Issue 1 2N5067 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(BR)* Collector - Emitter Breakdown Voltage Test Conditions IC = 200mA Min. Typ. Max. Unit 40 V ICEO Collector Cut-off Current ICEX Collector Cut-off Current ICBO Collector Cut-off Current VCB = 40V IE = 0 0.1 mA IEBO Emitter Cut-off Current VBE = 5V IC = 0 1.0 mA hFE* DC Current Gain IC = 1.0A VCE = 2V 20 IC = 5A VCE = 2V 7 Collector – Emitter Saturation IC = 1.0A IB = 0.1A 0.4 Voltage IC = 5A IB = 1.0A 1.5 VBE(on)* Emitter Base on Voltage IC = 1.0A VCE = 2V 1.2 hfe Small Signal Current Gain IC = 0.5A VCE = 10V f = 1.0 kHz 20 — IC =1.0A VCE = 10V f = 1.0 MHz 4.0 MHz VCE(sat)* fT Current Gain Bandwidth product VCE = 40V IB = 0 1.0 VCE = 40V VBE = 1.5V 0.1 TCASE =150°C 2 80 mA mA — V V THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction to Case Max 2.0 °C/W * Pulse test tp = 300μs , δ = 2 % Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6605 Issue 1