SEME-LAB BFT29

SILICON EPITAXIAL
NPN TRANSISTOR
BFT29 / BFT30 / BFT31
•
Hermetic TO-18 Metal Package
•
Designed For General Purpose Amplifiers, and Audio Driver
Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
BFT29
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
90V
80V
BFT30
BFT31
70
60
60
50
5V
1.0A
360mW
2mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJA
Thermal Resistance, Junction To Ambient
Max
Units
486
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Se melab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8963
Issue 1
Page 1 of 3
SILICON EPITAXIAL
NPN TRANSISTOR
BFT29 / BFT30 / BFT31
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
V(BR)CBO
(1)
V(BR)CEO
Parameters
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
Test Conditions
IC = 10µA
IE = 0
IC = 10mA
IB = 0
Min.
BFT29
90
BFT30
70
BFT31
60
BFT29
80
BFT30
60
BFT31
50
IC = 0
5
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10µA
ICBO
Collector-Cut-Off Current
VCB = Rated VCEO, IE = 0
IC = 1.0mA
VCE = 10V
IC = 10mA
VCE = 10V
hFE
(1)
Forward-Current Transfer Ratio
IC = 100mA
VCE = 10V
IC = 500mA
VCE = 10V
IC = 1.0A
VCE = 10V
Base-Emitter Saturation Voltage
100
BFT29
25
BFT30
45
BFT31
45
BFT29
30
BFT30
50
BFT31
50
BFT29
50
250
BFT30
75
250
BFT31
100
300
BFT29
30
BFT30
50
BFT31
50
BFT29
20
BFT30
25
BFT31
25
BFT31
0.75
BFT29
1.6
BFT30
1.0
BFT31
1.0
IC = 500mA
IB = 50mA
1.1
IC = 1.0A
IB = 100mA
2.0
IB = 100mA
(1)
V
0.75
IC = 1.0A
VBE(sat)
V
BFT30
Collector-Emitter Saturation
Voltage
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Units
V
0.95
IB = 50mA
(1)
Max.
BFT29
IC = 500mA
VCE(sat)
Typ.
nA
V
Document Number 8963
Issue 1
Page 2 of 3
SILICON EPITAXIAL
NPN TRANSISTOR
BFT29 / BFT30 / BFT31
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
Cobo
Output Capacitance
IC = 40mA
VCE = 10V
80
95
MHz
f = 20MHz
VCB = 10V
IE = 0
8.5
10
pF
f = 1.0MHz
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
MECHANICAL DATA
Dimensions in mm (inches)
5 .8 4 (0 .2 3 0 )
5 .3 1 (0 .2 0 9 )
5 .3 3 (0 .2 1 0 )
4 .3 2 (0 .1 7 0 )
4 .9 5 (0 .1 9 5 )
4 .5 2 (0 .1 7 8 )
)
)
0
0
1
7
1
.
0
0
(
(
3
2
3
3
.
.
5
4
1 2 .7 (0 .5 0 0 )
m in .
2
.
)
0
0
5
.
.
n
0 .4 8 (0 .0 1 9 )
0 .4 1 (0 .0 1 6 )
d ia .
i
0
(
m
7
.
2
1
2 .5 4 (0 .1 0 0 )
N o m .
3
1
2
TO-18 (TO-206AA)
Pin 1 - Emitter
Pin 2 - Base
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Pin 3 - Collector
Website: http://www.semelab-tt.com
Document Number 8963
Issue 1
Page 3 of 3