2N5010 MECHANICAL DATA Dimensions in mm (inches) SILICON EPITAXIAL NPN TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. General purpose power transistor for switching and linear applications in a hermetic TO–39 package. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO–39 (TO-205AD) PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) 500V VCBO Collector – Base Voltage VCER Collector – Emitter Voltage VEBO Emitter – Base Reverse Voltage IC Continuous Collector Current PTOT Total Device Dissipation TJ,TSTG Maximum Storage and Junction Temperature Range RθJC Thermal Impedance Junction To Case 500V R = 10Ω 5V 0.5A 2W TC = 25°C 200°C 50°C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions ICBO Collector Base Leakage Current VCB = 500V hFE ft D.C Current Gain VCE = 10V Min. IC =0.025A Transition Frequency Typ. 30 20 Max. Unit 0.006 mA 180 — MHz Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3696 Issue 1