2N5014 MECHANICAL DATA Dimensions in mm (inches) SILICON EPITAXIAL NPN TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. General purpose power transistor for switching and linear applications in a hermetic TO–39 package. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO–39 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) 900V VCBO Collector – Base Voltage VCER Collector – Emitter Voltage VEBO Emitter – Base Reverse Voltage 5V IC Continuous Collector Current 2W PTOT Total Device Dissipation TJ Maximum Operating Junction Temperature TSTG and Storage Temperature Range 900V R = 10Ω 3.5A TC = 25°C 200°C -55 to 200°C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions ICBO Collector Base Leakage Current VCB = 900V hFE D.C Current Gain VCE = 10V Min. IC =0.02A fae Typ. 20 20 Max. Unit 0.012 mA 180 — MHz Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3070 Issue 1