SEME-LAB 2N5014_01

2N5014
MECHANICAL DATA
Dimensions in mm (inches)
SILICON EPITAXIAL
NPN TRANSISTOR
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
FEATURES
0.41 (0.016)
0.53 (0.021)
dia.
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO–39 PACKAGE
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
900V
VCBO
Collector – Base Voltage
VCER
Collector – Emitter Voltage
VEBO
Emitter – Base Reverse Voltage
5V
IC
Continuous Collector Current
2W
PTOT
Total Device Dissipation
TJ
Maximum Operating Junction Temperature
TSTG
and Storage Temperature Range
900V
R = 10Ω
3.5A
TC = 25°C
200°C
-55 to 200°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
ICBO
Collector Base Leakage Current
VCB = 900V
hFE
D.C Current Gain
VCE = 10V
Min.
IC =0.02A
fae
Typ.
20
20
Max.
Unit
0.012
mA
180
—
MHz
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3070
Issue 1