2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2.54 (0.100) Nom. 3 1 2 TO18 METAL PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector These PNP silicon planar epitaxial trasistors are designed for digital and analog applications at current levels up 0.5 amps. 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. APPLICATIONS: 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO5 METAL PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS(TA = 25°C unless otherwise stated) Maximum Voltages VCBO VCEO VEBO Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Maximum Power Dissipation PD PD Total Dissipation @ 25°C Case Temperature Total Dissipation@ 25°C Free Air Temperature TJ Storage Temperature Operating Junction Temperature Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 2N3504 -45V -45V -5V 2N3504 2N3505 1.3 W 0.4 W -65°C to +200°C 200°C Document Number 3067 Issue: 1 2N3502 2N3503 2N3504 2N3505 ELECTRICAL CHARACTERISTICS (25°C free air temperature unless otherwise stated) Parameter Test Conditions Min. Typ. BVCBO BVEBO VCEO ICES ICBO(150) hFE Collector to Base Breakdown Voltage Emmiter to Base Breakdown Voltage Collector-Emitter Sustaining Voltage IC = 10µΑ IE = 0 IE = 10µΑ IC = 0 IC = 10mΑ IB = 0 VBE(sat) -60 2N3502 / 2N3504 -45 Max. Unit V -5 2N3503 / 2N3505 -60 2N3502 / 2N3504 -45 V V VCE = -50V VBE = 0 2N3503 / 2N3505 0.07 10 VCE = -30V VBE = 0 2N3502 / 2N3504 0.05 10 Collector Reverse IE = 0 VCB = -50V 2N3503 / 2N3505 10 Current t = 150°C VCB = -30V 2N3502 / 2N3504 10 IC = 10mA VCE = -10V 140 270 IC = 50mA VCE = -1.0V 115 160 IC = 1.0mA VCE = -10 V 135 200 IC = 150mA VCE = -10V 100 150 IC = 10µA 80 120 50 70 50 100 Collector Cutoff Current DC Current Gain VCE = -10V IC = 500mA VCE = -10 V VCE(sat) 2N3503 / 2N3505 t = -55°C 300 VCE = -1.0V IC = 50mA IB = 2.5mA -0.08 -0.25 IC = 150mA IB = 15mA -0.18 -0.4 IC = 500mA IB = 50mA -0.5 -1.6 IC = 50mA IB = 2.5mA -0.9 -1.0 Base Saturation Voltage IC = 150mA IB = 15mA -1.0 -1.3 Voltage Transition Frequency IC = 50mA Cob Output Capacitance VCB = -10V IE = 0 ton Turn On Time toff Turn Off Time IC = 300mA VCE = -20V IB1 = 30mA — V V -2.0 IC = 500mA IB = 50mA FT µA 300 IC = 50mA Collector Saturation nA f = 100MHZ IB2 = -30mA 2 2.50 — 4.5 8.0 30 40 65 100 pf ns Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3067 Issue: 1