SML100HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage Vces 600 V Ic, nom Ic 100 130 A DC Collector Current Tc=75C Tc=25C Repetitive peak Collector Current tp=1msec,Tc=75C Icrm 200 A Total PowerDissipation Tc=25C Ptot 340 W Vges +/-20 V If 100 A Gate-emitter peak voltage DC Forward Diode Current Repetitive Peak Forward Current tp=1msec Ifrm 200 A I2t value per diode Vr=0V, tp=10msec, Tvj=125C I2t 1250 A2sec RMS, 50Hz, t=1min Visol 2500 V Isolation test voltage Collector-emitter saturation voltage Ic=75A,Vge=15V, Tc=25C Ic=75A,Vge=15V,Tc=125C Vce(sat) Gate Threshold voltage Vce=Vge, Tvj=25C Vge(th) Input capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cies 4.3 nF Reverse transfer Capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cres 0.4 nF Collector emitter cut off current Vce=600V,Vge=0V,Tvj=25C Vce=600V,Vge=0V,Tvj=125C Ices 1 1 Gate emitter cut off current Vce=0V,Vge=20V,Tvj=25C Iges 4.5 1.95 2.2 2.45 V 5.5 6.5 V 500 µA 400 µA Turn on delay time Rise time Turn off delay time Fall time Turn energy loss per pulse Ic=100A, Vcc=300V Vge=+/15V,Rg=2.2Ω,Tvj=25C Vge=+/-15V,Rg=2.2Ω,Tvj=125C td,on 25 26 Ic=100A, Vcc=300V Vge=+/-15V,Rg=2.2Ω,Tvj=25C Vge=+/-15V,Rg=2.2Ω,Tvj=125C tr 10 11 Ic=100A, Vcc=300V Vge=+/-15V,Rg=2.2Ω,Tvj=25C Vge=+/-15V,Rg=2.2Ω,Tvj=125C td,off Ic=100A, Vcc=300V Vge=+/-15V,Rg=2.2Ω,Tvj=25C Vge=+/-15V,Rg=2.2Ω,Tvj=125C tf nsec nsec nsec nsec nsec 130 150 nsec nsec 20 30 nsec Ic=75A,Vce=300V,Vge=15V Rge=2.7Ω,Tvj=125C,L=35nH Eon 1.0 mJ Turn off energy loss per pulse Ic=75A,Vce=300V, Vge=15V Rge=Ω,Tvj=125C,L=30nH Eoff 2.9 mJ Isc 450 A Stray Module inductance Lσce 40 nH Terminal-chip resistance Rc 1.0 mΩ SC Data tp≤10µsec, Vge≤15V Tvj≤125C,Vcc=360V,Vce(max)Vces-Lσdi/dT Diode characteristics Forward voltage Ic=75A,Vge=0V, Tc=25C Ic=75A,Vge=0V, Tc=125C Vf 1.25 1.6 V 1.2 Irm 150 180 A If=75A, -di/dt=3000A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C Qr 7.7 13 µC If=75A, -di/dt=3000A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C Erec Peak reverse recovery current If=75A, -di/dt=3000A/µsec Vce=300V,Vge=-10V,Tvj=25C Vce=300V,Vge=-10V,Tvj=125C Recovered charge Reverse recovery energy 3.2 mJ mJ Thermal Properties Thermal resistance junction to case Thermal resistance case to heatsink Min Igbt Diode Typ RθJ-C 0.37 0.67 RθC-hs Maximum junction temperature Tvj Maximum operating temperature Top Storage Temperature Tstg Max 0.03 K/W K/W 150 C -40 125 C -40 125 C