SML400HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage Vce 600 V DC Collector Current Tc=70C, Tvj=175C Tc=25C,Tvj=175c Ic, nom Ic 400 500 A Repetitive peak Collector Current tp=1msec,Tc=80C Icrm 800 A Total PowerDissipation Tc=25C Ptot 850 W Vges +/-20 V If 400 A Gate-emitter peak voltage DC Forward Diode Current Repetitive Peak Forward Current tp=1msec Ifrm 800 A I2t value per diode Vr=0V, tp=10msec, Tvj=125C Tvj=150C I2t 11000 10500 A2sec RMS, 50Hz, t=1min Visol 2500 V Isolation test voltage 1.55 1.6 1.7 1.9 V 5.8 6.5 V Collector-emitter saturation voltage Ic=400A,Vge=15V, Tc=25C Ic=400A,Vge=15V,Tc=125C Ic=400A,Vge=15V,Tc=150C Vce(sat) Gate Threshold voltage Ic=6.4mA,Vce=Vge, Tvj=25C Vge(th) Input capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cies 26 nF Reverse transfer Capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cres 0.76 nF Collector emitter cut off current Vce=600V,Vge=0V,Tvj=25C Vce=600V,Vge=0V,Tvj=125C Ices 1 1 Gate emitter cut off current Vce=0V,Vge=20V,Tvj=25C Iges 4.9 5 mA mA 400 nA Turn on delay time Rise time Turn off delay time Fall time Turn energy loss per pulse Ic=400A, Vcc=300V Vge=+/15V,Rg=1.5Ω,Tvj=25C Vge=+/-15V,Rg=1.5Ω,Tvj=125C Vge=+/-15V,Rg=1.5Ω,Tvj=150C Ic=400A, Vcc=300V Vge=+/-15V,Rg=1.5Ω,Tvj=25C Vge=+/-15V,Rg=1.5Ω,Tvj=125C Vge=+/-15V,Rg=1.5Ω,Tvj=150C Ic=400A, Vcc=300V Vge=+/-15V,Rg=1.5Ω,Tvj=25C Vge=+/-15V,Rg=1.5Ω,Tvj=125C Vge=+/-15V,Rg=1.5Ω,Tvj=150C Ic=400A, Vcc=300V Vge=+/-15V,Rg=1.5Ω,Tvj=25C Vge=+/-15V,Rg=1.5Ω,Tvj=125C Vge=+/-15V,Rg=1.5Ω,Tvj=150C Ic=400A,Vce=300V,Vge=15V Rge=1.5Ω,L=30nH Tvj=125C Tvj=150C td,on 110 120 130 nsec nsec nsec tr 50 60 60 nsec nsec nsec td,off 490 520 530 nsec nsec nsec tf 50 70 70 nsec nsec nsec 3.2 3.4 mJ mJ Eon Turn off energy loss per pulse Ic=400A,Vce=300V,Vge=15V Rge=1.5Ω,L=30nH Tvj=125C Tvj=150C Eoff 15 15.5 mJ mJ SC Data tp≤10µsec, Vge≤15V Vcc=360V, Tvj=25C Vce(max)=Vces-Lσdi/dt Tvj=150C Isc 2800 2000 A A Stray Module inductance Lσce 40 nH Terminal-chip resistance Rc 1.2 mΩ Diode characteristics Forward voltage Ic=400A,Vge=0V, Tc=25C Ic=400A,Vge=0V, Tc=125C Ic=400A,Vge=0V, Tc=150C Peak reverse recovery current If=400A, -di/dt=7000A/µsec Vce=300V,Vge=-10V,Tvj=25C Vce=300V,Vge=-10V,Tvj=125C Vce=300V,Vge=-10V,Tvj=150C Recovered charge Reverse recovery energy If=400A, -di/dt=7000A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C Vce=600V,Vge=-10V,Tvj=150C If=400A, -di/dt=7000A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C Vce=600V,Vge=-10V,Tvj=150C 1.55 1.5 1.4 1.9 V V V 270 330 350 A A A Qr 15 29 32 µC µC µC Erec 3.6 7.4 8.3 mJ mJ mJ Vf Irm Thermal Properties Thermal resistance junction to case Thermal resistance case to heatsink Min Igbt Diode Typ RθJ-C 0.09 0.1 RθC-hs Maximum junction temperature Tvj Maximum operating temperature Top Storage Temperature Tstg Max 0.03 K/W K/W 175 C -55 175 C -55 175 C CIRCUIT DIAGRAM