SML300HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation -trench gate igbts Maximum rated values/ Electrical Properties Collector-emitter Voltage Vce 600 V DC Collector Current Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom Ic 300 400 A Repetitive peak Collector Current tp=1msec,Tc=80C Icrm 600 A Total Power Dissipation Tc=25C Ptot 1250 W Vges +/-20 V If 300 A Gate-emitter peak voltage DC Forward Diode Current Repetitive Peak Forward Current tp=1msec Ifrm 600 A I2t value per diode Vr=0V, tp=10msec, Tvj=125C Tvj=150C I2t 8400 7900 A2sec RMS, 50Hz, t=1min Visol 2500 V Isolation voltage 1.45 1.6 1.7 1.9 V 5.8 6.5 V Collector-emitter saturation voltage Ic=300A,Vge=15V, Tc=25C Ic=300A,Vge=15V,Tc=125C Ic=300A,Vge=15V,Tc=150C Vce(sat) Gate Threshold voltage Ic=4.8mA,Vce=Vge, Tvj=25C Vge(th) Input capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cies 19 nF Reverse transfer Capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cres 0.57 nF Collector emitter cut off current Vce=600V,Vge=0V,Tvj=25C Vce=600V,Vge=0V,Tvj=125C Ices 1 1 Gate emitter cut off current Vce=0V,Vge=20V,Tvj=25C Iges 4.9 5 mA mA 400 nA Turn on delay time Ic=300A, Vcc=300V Vge=+/15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C td,on 110 120 130 nsec nsec nsec tr 50 60 60 nsec nsec nsec td,off 490 520 530 nsec nsec nsec tf 50 70 70 nsec nsec nsec Turn on energy loss per pulse Ic=300A,Vce=300V,Vge=+/-15V Rge=2.4Ω,L=30nH Tvj=125C di/dt=6500A/µsec Tvj=150C Eon 3.1 3.3 mJ mJ Turn off energy loss per pulse Ic=300A,Vce=300V,Vge=+/-15V Rge=2.4Ω,L=30nH Tvj=125C di/dt=6500A/µsec Tvj=150C Eoff 15 15.5 mJ mJ Isc 2100 1500 A A Stray Module inductance Lσce 40 nH Terminal-chip resistance Rc 1.2 mΩ Rise time Turn off delay time Fall time SC Data Ic=300A, Vcc=300V Vge=+/-15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C Ic=300A, Vcc=300V Vge=+/-15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C Ic=300A, Vcc=300V Vge=+/-15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C tp≤10µsec, Vge≤15V Vcc=360V, Tvj=25C Vce(max)=Vces-Lσdi/dt Tvj=150C Diode characteristics Forward voltage Ic=300A,Vge=0V, Tc=25C Ic=300A,Vge=0V, Tc=125C Ic=300A,Vge=0V, Tc=150C Peak reverse recovery current If=300A, -di/dt=6500A/µsec Vce=300V,Vge=-15V,Tvj=25C Vce=300V,Vge=-15V,Tvj=125C Vce=300V,Vge=-15V,Tvj=150C Recovered charge Reverse recovery energy If=300A, -di/dt=6500A/µsec Vce=300V,Vge=-15V,Tvj=25C Vce=300V,Vge=-15V,Tvj=125C Vce=300V,Vge=-15V,Tvj=150C If=300A, -di/dt=6500A/µsec Vce=300V,Vge=-15V,Tvj=25C Vce=300V,Vge=-15V,Tvj=125C Vce=300V,Vge=-15V,Tvj=150C Vf 1.55 1.95 1.5 1.45 V V V Irm 190 235 250 A A A Qr 13 24 28 µC µC µC Erec 3.4 6.2 7.0 mJ mJ mJ Thermal Properties Thermal resistance junction to case Thermal resistance case to heatsink Min Igbt Diode Typ RθJ-C 0.12 0.16 RθC-hs Maximum junction temperature Tvj Maximum operating temperature Top Storage Temperature Tstg Max 0.03 K/W K/W 175 C -55 175 C -55 175 C CIRCUIT DIAGRAM