SML300HB12GG Attributes: -Aerospace build standard -High reliability -Lightweight -Cu and metal matrix base plate versions (pin finned versions available) -AlN isolation -Trench gate igbts Maximum rated values/Electrical Properties Collector-emitter voltage Vce 1200 V DC collector current Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom Ic 320 455 A Repetitive peak collector current tp=1msec,Tc=80C Icrm 600 A Total power dissipation Tc=25C Ptot 850 W Vges +/-20 V If 400 A Gate-emitter peak voltage DC forward diode current Repetitive peak forward current tp=1msec Ifrm 800 A I2t value per diode Vr=0V, tp=10msec, Tvj=125C Tvj=150C I2t 11000 10500 A2sec RMS, 50Hz, t=1min Visol 2500 V Isolation test voltage 1.7 2.0 2.15 2.45 V 5.8 6.5 V Collector-emitter saturation voltage Ic=300A,Vge=15V, Tc=25C Ic=300A,Vge=15V,Tc=125C Ic=300A,Vge=15V,Tc=150C Vce(sat) Gate threshold voltage Ic=6.4mA,Vce=Vge, Tvj=25C Vge(th) Input capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cies 21.5 nF Reverse transfer capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cres 0.98 nF Collector emitter cut off current Vce=1200V,Vge=0V,Tvj=25C Vce=1200,Vge=0V,Tvj=125C Ices 0.3 mA mA Gate emitter cut off current Vce=0V,Vge=20V,Tvj=25C Iges 400 nA 5.0 Turn on delay time Ic=300A, Vcc=600V Vge=+/-15V,Rg=2Ω,Tvj=125C td,on 280 nsec Ic=300A, Vcc=600V Vge=+/-15V,Rg=2Ω,Tvj=125C tr 65 nsec Ic=300A, Vcc=600V Vge=+/-15V,Rg=2Ω,Tvj=125C td,off 630 nsec Ic=300A, Vcc=600V Vge=+/-15V,Rg=2Ω, Tvj=125C tf 130 nsec Turn on energy loss per pulse Ic=300A,Vce=600V,Vge=15V Rge=2Ω,L=30nH Tvj=125C Eon 35 mJ Turn off energy loss per pulse Ic=300A,Vce=600V,Vge=15V Rge=2Ω,L=30nH Tvj=125C Eoff 45 mJ Isc 2800 2000 A A Stray Module inductance Lσce 18 nH Terminal-chip resistance Rc 1.0 mΩ Rise time Turn off delay time Fall time SC Data tp≤10µsec, Vge≤15V Vcc=360V, Tvj=25C Vce(max)=Vces-Lσdi/dt Tvj=150C Diode characteristics Forward voltage Ic=300A,Vge=0V, Tc=25C Ic=300A,Vge=0V, Tc=125C Vf 1.6 1.6 1.8 V 1.8 V Irm 375 A If=300A, -di/dt=6200A/µsec Vce=600V,Vge=-10V,Tvj=125C Qr 75 µC If=300A, -di/dt=6200A/µsec Vce=600V,Vge=-10V,Tvj=125C Erec 33 mJ Peak reverse recovery current If=300A, -di/dt=6200A/µsec Vce=300V,Vge=-10V,Tvj=125C Recovered charge Reverse recovery energy Thermal Properties Thermal resistance junction to case (MMC) Thermal resistance case to heatsink Min Igbt Diode Typ RθJ-C 0.042 0.1 RθC-hs Maximum junction temperature Tvj Maximum operating temperature Top Storage Temperature Tstg Max 0.045 K/W K/W 175 C -55 175 C -55 175 C GAL GAR CIRCUIT DIAGRAM