SEME-LAB SML300HB12GG

SML300HB12GG
Attributes:
-Aerospace build standard
-High reliability
-Lightweight
-Cu and metal matrix base plate versions
(pin finned versions available)
-AlN isolation
-Trench gate igbts
Maximum rated values/Electrical Properties
Collector-emitter voltage
Vce
1200
V
DC collector current
Tc=70C, Tvj=175C
Tc=25C,Tvj=175C
Ic, nom
Ic
320
455
A
Repetitive peak collector current
tp=1msec,Tc=80C
Icrm
600
A
Total power dissipation
Tc=25C
Ptot
850
W
Vges
+/-20
V
If
400
A
Gate-emitter peak voltage
DC forward diode
current
Repetitive peak
forward current
tp=1msec
Ifrm
800
A
I2t value per diode
Vr=0V, tp=10msec,
Tvj=125C
Tvj=150C
I2t
11000
10500
A2sec
RMS, 50Hz, t=1min
Visol
2500
V
Isolation test voltage
1.7
2.0
2.15
2.45
V
5.8
6.5
V
Collector-emitter saturation
voltage
Ic=300A,Vge=15V, Tc=25C
Ic=300A,Vge=15V,Tc=125C
Ic=300A,Vge=15V,Tc=150C
Vce(sat)
Gate threshold voltage
Ic=6.4mA,Vce=Vge, Tvj=25C
Vge(th)
Input capacitance
f=1MHz,Tvj=25C,Vce=25V,
Vge=0V
Cies
21.5
nF
Reverse transfer capacitance
f=1MHz,Tvj=25C,Vce=25V,
Vge=0V
Cres
0.98
nF
Collector emitter cut off
current
Vce=1200V,Vge=0V,Tvj=25C
Vce=1200,Vge=0V,Tvj=125C
Ices
0.3
mA
mA
Gate emitter cut off current
Vce=0V,Vge=20V,Tvj=25C
Iges
400
nA
5.0
Turn on delay time
Ic=300A, Vcc=600V
Vge=+/-15V,Rg=2Ω,Tvj=125C
td,on
280
nsec
Ic=300A, Vcc=600V
Vge=+/-15V,Rg=2Ω,Tvj=125C
tr
65
nsec
Ic=300A, Vcc=600V
Vge=+/-15V,Rg=2Ω,Tvj=125C
td,off
630
nsec
Ic=300A, Vcc=600V
Vge=+/-15V,Rg=2Ω, Tvj=125C
tf
130
nsec
Turn on energy loss per pulse Ic=300A,Vce=600V,Vge=15V
Rge=2Ω,L=30nH
Tvj=125C
Eon
35
mJ
Turn off energy loss per pulse Ic=300A,Vce=600V,Vge=15V
Rge=2Ω,L=30nH
Tvj=125C
Eoff
45
mJ
Isc
2800
2000
A
A
Stray Module inductance
Lσce
18
nH
Terminal-chip resistance
Rc
1.0
mΩ
Rise time
Turn off delay time
Fall time
SC Data
tp≤10µsec, Vge≤15V Vcc=360V,
Tvj=25C
Vce(max)=Vces-Lσdi/dt Tvj=150C
Diode characteristics
Forward voltage
Ic=300A,Vge=0V, Tc=25C
Ic=300A,Vge=0V, Tc=125C
Vf
1.6
1.6
1.8 V
1.8 V
Irm
375
A
If=300A, -di/dt=6200A/µsec
Vce=600V,Vge=-10V,Tvj=125C
Qr
75
µC
If=300A, -di/dt=6200A/µsec
Vce=600V,Vge=-10V,Tvj=125C
Erec
33
mJ
Peak reverse recovery current If=300A, -di/dt=6200A/µsec
Vce=300V,Vge=-10V,Tvj=125C
Recovered charge
Reverse recovery energy
Thermal Properties
Thermal resistance junction to
case (MMC)
Thermal resistance case to
heatsink
Min
Igbt
Diode
Typ
RθJ-C
0.042
0.1
RθC-hs
Maximum junction temperature
Tvj
Maximum operating temperature
Top
Storage Temperature
Tstg
Max
0.045
K/W
K/W
175
C
-55
175
C
-55
175
C
GAL
GAR
CIRCUIT DIAGRAM