SK30GBB066T ) 0- 1, 2 Absolute Maximum Ratings Symbol Conditions IGBT (34 :; 5 ) 0- 1 5 ) /8- 1 :;) 0 7++ ( 9+ # ) 8+ 1 */ # 7+ # < 0+ ( 5 ) /-+ 1 7 @ ) 0- 1 *7 # ) 8+ 1 0A # 7+ # /7+ # ( ) *7+ (= (!3 > 0+ (= (34 ? 7++ ( Units ) 0- 1 (!34 SEMITOP® 3 Values Inverse Diode IGBT Module % %:; SK30GBB066T %4; 5 ) /8- 1 %:;) 0 % ) /+ = 2B 5 ) /-+ 1 Module # :;4 Target Data B5 Features ! " #$ " %& ' ( #, / D 34 (!3 ) (3, ) +,9* # (!3 ) + (, (3 ) (34 1 C9+ DDD E/0- 1 0-++ ( ) 0- 1, 2 Characteristics Symbol Conditions IGBT (!3 C9+ DDD E/8- min. typ. - -,A 5 ) 0- 1 max. 7,- ( +,++/7 # 5 ) /0- 1 !34 (3 ) + (, (!3 ) 0+ ( # 5 ) 0- 1 *++ 5 ) /0- 1 Typical Applications* (3+ Remarks ( ) *+++( #,-+.,/ 3 (3 5 ) 0- 1 3 # +,F /,/ ( +,A / ( 5 ) 0-1 /A,* 0- G 5 ) /-+1 0A *- G 5 ) 0-1 BD /,9- /,A- ( 5 ) /0-1 BD /,7- 0,+- ) / ;. /,7* +,// % % +,+- % (!3)C8(DDDE/-( 08- :! ) 0- G I ) 0**- #I@ :! ) 0- G I ) 0**- #I@ 09 08 +,F8 *0A -9 J /,88 J /,7- KI& ) *+ #, (!3 ) /- ( (3 ) 0-, (!3 ) + ( 3 :5C # 5 ) /-+ 1 (!3 ) /- ( H! Units ! ( ) *++( ) *+# 5 ) /-+ 1 (!3) C8IE/-( ( GBB-T 1 03-06-2009 DIL © by SEMIKRON SK30GBB066T Characteristics Symbol Conditions Inverse Diode (% ) (3 % ) *+ #= (!3 ) + ( (%+ % ® SEMITOP 3 IGBT Module SK30GBB066T min. typ. max. Units 5 ) 0- 1 BD /,9- /,8 ( 5 ) /-+ 1 BD /,9- /,8 ( 5 ) 0- 1 / /,/ ( 5 ) /-+ 1 +,F / ( 5 ) 0- 1 /- 0+ G 5 ) /-+ 1 /A 0*,* G 5 ) /-+ 1 *+ /,7 # @ H % ) *+ # I ) 0**- #I@ 3 () *++( +,07 J :5C 0,/ KI& ; L ::; 2 0,0- 0,- ' *+ 9F*<-M G Temperature sensor :/++ )/++1 :0-)-LG Target Data Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of ! " #$ " %& ' component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Typical Applications* Remarks ( ) *+++( #,-+.,/ GBB-T 2 03-06-2009 DIL © by SEMIKRON SK30GBB066T Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 03-06-2009 DIL © by SEMIKRON SK30GBB066T Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 03-06-2009 DIL © by SEMIKRON SK30GBB066T FA 4 , N, O 0 FA 5 !C 03-06-2009 DIL © by SEMIKRON