SKM150GAL12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMITRANS® 2 VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V 450 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A Tj = 125 °C Inverse diode SKM150GAL12V IF Tj = 175 °C IFnom Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • • • • DC/DC – converter Brake chopper Switched reluctance motor DC – Motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A Tj Freewheeling diode IF Tj = 175 °C IFnom IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50Hz, t = 1 min 200 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 rCE Conditions IC = 150 A VGE = 15 V chiplevel VGE = 15 V VGE(th) VGE=VCE, IC = 6 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres QG VCE = 25 V VGE = 0 V min. typ. max. Unit Tj = 25 °C 1.75 2.20 V Tj = 150 °C 2.20 2.50 V Tj = 25 °C 0.94 1.04 V Tj = 150 °C 0.88 0.98 V Tj = 25 °C 5.40 7.7 m 8.80 10.13 m 6 6.5 V 0.1 0.3 mA Tj = 150 °C 5.5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 9 nF f = 1 MHz 0.89 nF f = 1 MHz 0.884 nF 1650 nC 5.0 VGE = - 8 V...+ 15 V RGint GAL © by SEMIKRON Rev. 3 – 23.03.2011 1 SKM150GAL12V Characteristics Symbol td(on) tr Eon td(off) tf Eoff SEMITRANS® 2 SKM150GAL12V Rth(j-c) Conditions VCC = 600 V IC = 150 A VGE = ±15 V RG on = 1.5 RG off = 1.5 di/dton = 4400 A/µs di/dtoff = 1800 A/µs du/dtoff = 8100 V/ µs per IGBT Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 rF Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • • • • DC/DC – converter Brake chopper Switched reluctance motor DC – Motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° IRRM Qrr Err Rth(j-c) rF Qrr Err Rth(j-c) typ. max. Unit 258 ns Tj = 150 °C 32 ns Tj = 150 °C 13.5 mJ Tj = 150 °C 388 ns Tj = 150 °C 62 ns Tj = 150 °C 14.2 mJ 0.19 K/W Tj = 25 °C 2.14 2.46 V Tj = 150 °C 2.07 2.38 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 5.6 6.4 m 7.8 8.5 m Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 5500 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 150 A VGE = 0 V chip VF0 IRRM min. Tj = 150 °C 160 A 21.5 µC 8.9 mJ 0.31 K/W Tj = 25 °C 2.14 2.46 V Tj = 150 °C 2.07 2.38 V V Tj = 25 °C 1.3 1.5 Tj = 150 °C 0.9 1.1 V Tj = 25 °C 5.6 6.4 m 7.8 8.5 m Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 5900 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 600 V per Diode 116 A 22 µC 8.2 mJ 0.31 K/W Module LCE RCC'+EE' 30 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt nH TC = 25 °C 0.65 m TC = 125 °C 1 m 0.04 to terminals M5 0.05 K/W 3 5 Nm 2.5 5 Nm Nm w 160 g GAL 2 Rev. 3 – 23.03.2011 © by SEMIKRON SKM150GAL12V Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 23.03.2011 3 SKM150GAL12V Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 3 – 23.03.2011 © by SEMIKRON SKM150GAL12V SEMITRANS 2 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 23.03.2011 5