1SS370W Silicon Epitaxial Planar Diode For high voltage and high speed switching applications 3 1 2 Marking Code: F5 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 250 V Reverse Voltage VR 200 V Average Forward Current IF 100 mA Maximum Peak Forward Current IFM 300 mA Surge Forward Current (10 ms) IFSM 2 A Power Dissipation PD 100 mW Junction Temperature Tj 125 O Tstg - 55 to + 125 O Symbol Max. Unit Forward Voltage at IF = 10 mA at IF = 100 mA VF VF 1 1.2 V Reverse Current at VR = 50 V at VR = 200 V IR IR 0.1 1 µA CT 3 pF trr 60 ns Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Total Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/07/2006 1SS370W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/07/2006