ST 2SA1020 PNP Silicon Epitaxial Transistor Power amplifier application Power switching application 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Collector Power Dissipation Ptot 900 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain Current Gain Group at -VCE = 2 V, -IC = 0.5 A O Y at -VCE = 2 V, -IC = 1.5 A Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Emitter Breakdown Voltage at -IC = 10 mA Collector Emitter Saturation Voltage at -IC = 1 A, -IB = 0.05 A Base Emitter Saturation Voltage at -IC = 1 A, -IC = 0.05 A Transition Frequency at -VCE = 2 V, -IC = 0.5 A Collector Output Capacitance at -VCB = 10 V, f = 1 MHz C C Symbol Min. Typ. Max. Unit hFE hFE hFE 70 120 40 - 140 240 - - -ICBO - - 1 µA -IEBO - - 1 µA -V(BR)CEO 50 - - V -VCE(sat) - - 0.5 V -VBE(sat) - - 1.2 V fT - 100 - MHz Cob - 40 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 25/12/2008 ST 2SA1020 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 25/12/2008