ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V IC 1.5 A Total Power Dissipation Ptot 0.5 11) W Junction Temperature TJ 150 O Storage Temperature Range TS - 55 to + 150 O Collector Current 1) C C 2 When mounted on a 250 mm X 0.8 t ceramic substrate. Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE hFE 100 160 - 200 320 - Collector Base Breakdown Voltage at IC = 1 mA V(BR)CBO 30 - - V Collector Emitter Breakdown Voltage at IC = 10 mA V(BR)CEO 30 - - V Emitter Base Breakdown Voltage at IE = 1 mA V(BR)EBO 5 - - V ICBO - - 100 nA IEBO - - 100 nA VCE(sat) - - 2 V Base Emitter Voltage at VCE = 2 V, IC = 500 mA VBE - - 1 V Transition Frequency at VCE = 2 V, IC = 500 mA fT - 120 - MHz Cob - - 40 pF DC Current Gain at VCE = 2 V, IC = 500 mA Current Gain Group Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 1.5 A, IB = 30 mA Collector Output Capacitance at VCB = 10 V, f = 1 MHz O Y SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/04/2007 ST 2SC4375U SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/04/2007 ST 2SC4375U SOT-89 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/04/2007