SEMTECH_ELEC ST

ST 2SC4375U
NPN Silicon Epitaxial Planar Transistor
High current application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
30
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage
VEBO
5
V
IC
1.5
A
Total Power Dissipation
Ptot
0.5
11)
W
Junction Temperature
TJ
150
O
Storage Temperature Range
TS
- 55 to + 150
O
Collector Current
1)
C
C
2
When mounted on a 250 mm X 0.8 t ceramic substrate.
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
100
160
-
200
320
-
Collector Base Breakdown Voltage
at IC = 1 mA
V(BR)CBO
30
-
-
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
V(BR)CEO
30
-
-
V
Emitter Base Breakdown Voltage
at IE = 1 mA
V(BR)EBO
5
-
-
V
ICBO
-
-
100
nA
IEBO
-
-
100
nA
VCE(sat)
-
-
2
V
Base Emitter Voltage
at VCE = 2 V, IC = 500 mA
VBE
-
-
1
V
Transition Frequency
at VCE = 2 V, IC = 500 mA
fT
-
120
-
MHz
Cob
-
-
40
pF
DC Current Gain
at VCE = 2 V, IC = 500 mA
Current Gain Group
Collector Cutoff Current
at VCB = 30 V
Emitter Cutoff Current
at VEB = 5 V
Collector Emitter Saturation Voltage
at IC = 1.5 A, IB = 30 mA
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
O
Y
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/04/2007
ST 2SC4375U
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/04/2007
ST 2SC4375U
SOT-89 PACKAGE OUTLINE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/04/2007