LF353 JFET-INPUT DUAL OPERATIONAL AMPLIFIER SLOS012B – MARCH 1987 – REVISED AUGUST 1994 D D D D D D D D D OR P PACKAGE (TOP VIEW) Low Input Bias Current . . . 50 pA Typ Low Input Noise Current 0.01 pA/√Hz Typ Low Input Noise Voltage . . . 18 nV/√Hz Typ Low Supply Current . . . 3.6 mA Typ High Input Impedance . . . 1012 Ω Typ Internally Trimmed Offset Voltage Gain Bandwidth . . . 3 MHz Typ High Slew Rate . . . 13 V/µs Typ 1OUT 1IN – 1IN + VCC – 1 8 2 7 3 6 4 5 VCC + 2OUT 2IN – 2IN + description This device is a low-cost, high-speed, JFET-input operational amplifier with very low input offset voltage. It requires low supply current yet maintains a large gain-bandwidth product and a fast slew rate. In addition, the matched high-voltage JFET input provides very low input bias and offset currents. The LF353 can be used in applications such as high-speed integrators, digital-to-analog converters, sample-and-hold circuits, and many other circuits. The LF353 is characterized for operation from 0°C to 70°C. symbol (each amplifier – IN – OUT + IN + AVAILABLE OPTIONS TA VIOmax AT 25°C 0°C to 70°C 10 mV PACKAGE SMALL OUTLINE (D) PLASTIC DIP (P) LF353D LF353P The D packages are available taped and reeled. Add the suffix R to the device type (ie., LF353DR). absolute maximum ratings over operating free-air temperature range (unless otherwise noted) Supply voltage, VCC + . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Supply voltage, VCC – . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 18 V Differential input voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 V Input voltage, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 15 V Duration of output short circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Operating temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C NOTE 1: Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage. Copyright 1994, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 LF353 JFET-INPUT DUAL OPERATIONAL AMPLIFIER SLOS012B – MARCH 1987 – REVISED AUGUST 1994 recommended operating conditions MIN MAX Supply voltage, VCC + 3.5 18 V Supply voltage, VCC – – 3.5 – 18 V UNIT electrical characteristics over operating free-air temperature range, VCC ± = ±15 V (unless otherwise specified) PARAMETER TEST CONDITIONS VIO Input offset voltage VIC = 0 0, RS = 10 kΩ αVIO Average temperature coefficient of input offset voltage VIC = 0, RS = 10 kΩ IIO Inp t offset current Input c rrent‡ VIC = 0 IIB Inp t bias current Input c rrent‡ VIC = 0 VICR Common-mode input voltage range VOM Maximum peak output voltage swing TA† 25°C MIN TYP MAX 5 10 Full range 13 25 70°C 25°C 50 70°C AVD Large signal differential voltage Large-signal VO = ± 10 V V, ri Input resistance CMRR Common-mode rejection ratio TJ = 25°C RS ≤ 10 kΩ kSVR Supply-voltage rejection ratio See Note 2 RL = 2 kΩ 100 pA 4 nA 200 pA 8 nA ± 11 – 12 to 15 V V ± 12 ± 13.5 25°C 25 100 Full range 15 RL = 10 kΩ mV µV/°C 10 25°C UNIT V/mV 1012 Ω 70 100 dB 70 100 dB ICC Supply current 3.6 6.5 mA † Full range is 0°C to 70°C. ‡ Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junction temperatures as close to the ambient temperature as possible. NOTE 2: Supply-voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously. operating characteristics, VCC± = ±15 V, TA = 25°C PARAMETER TEST CONDITIONS VO1/VO2 SR Crosstalk attentuation B1 Vn Unity-gain bandwidth Equivalent input noise voltage f = 1 kHz, In Equivalent input noise current f = 1 kHz 2 MIN f = 1 kHz Slew rate 8 POST OFFICE BOX 655303 RS = 20 Ω • DALLAS, TEXAS 75265 TYP MAX UNIT 120 dB 13 V/µs 3 MHz 18 nV/√Hz 0.01 pA/√Hz PACKAGE OPTION ADDENDUM www.ti.com 24-Oct-2006 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty LF353D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM LF353DE4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM LF353DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM LF353DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM LF353DRE4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM LF353DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM LF353P ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type LF353PE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LF353DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 LF353DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LF353DR SOIC D 8 2500 367.0 367.0 35.0 LF353DR SOIC D 8 2500 340.5 338.1 20.6 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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