SSM6679M
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
D
D
Low on-resistance
D
D
Fast switching characteristics
G
S
SO-8
BVDSS
-30V
RDS(ON)
9mΩ
ID
-14A
S
S
Description
D
Advanced power MOSFETs from Silicon Standard provide
the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is widely preferred for commercial and industrial
surface-mount applications and is well suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID @ TA=25°C
ID @ TA=100°C
Rating
Units
-30
V
± 25
V
3
-14
A
3
-8.9
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-50
A
PD @ TA=25°C
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Rthj-a
Rev.2.02 4/06/2004
Parameter
Thermal Resistance Junction-ambient
3
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Max.
Value
Unit
50
°C/W
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SSM6679M
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.03
-
V/°C
VGS=-10V, ID=-14A
-
-
9
mΩ
VGS=-4.5V, ID=-11A
-
-
13
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=-10V, ID=-14A
-
26
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 25V
-
-
±100
nA
ID=-14A
-
37
60
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
25
-
nC
VDS=-15V
-
13
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω ,VGS=-10V
-
58
-
ns
tf
Fall Time
RD=15Ω
-
43
-
ns
Ciss
Input Capacitance
VGS=0V
-
2860 4580
pF
Coss
Output Capacitance
VDS=-25V
-
950
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
640
-
pF
Min.
Typ.
IS=-2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-14A, VGS=0V,
-
48
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
46
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 °C/W when mounted on Min. copper pad.
Rev.2.02 4/06/2004
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2 of 4
SSM6679M
280
150
-10V
-7.0V
T A = 25 C
-ID , Drain Current (A)
240
200
-5.0V
160
-4.5V
120
-10V
-7.0V
-5.0V
T A = 150 o C
-ID , Drain Current (A)
o
80
-4.5V
100
50
V G = -3.0 V
V G = -3.0 V
40
0
0
0
1
2
3
4
0
5
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
1.8
I D = -11 A
T A =25 ℃
I D = -14 A
V G =-10V
1.6
Normalized R DS(ON)
RDS(ON) (mΩ)
12
10
1.4
1.2
1.0
8
0.8
6
0.6
3
5
7
9
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
14
3
12
10
-VGS(th) (V)
2
-IS(A)
8
T j =25 o C
T j =150 o C
6
1
4
2
0
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Rev.2.02 4/06/2004
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM6679M
f=1.0MHz
-VGS , Gate to Source Voltage (V)
12
10000
I D = - 14 A
V DS = -24V
10
Ciss
C (pF)
8
6
Coss
1000
Crss
4
2
0
100
0
20
40
60
80
1
5
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
13
17
21
25
29
Fig 10. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
1ms
10
10ms
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 7. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.02 4/06/2004
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