SSM4409GEM
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
D
D
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
RoHS Compliant
D
D
G
S
SO-8
S
S
BVDSS
-35V
RDS(ON)
7.5mΩ
ID
-14.5A
DESCRIPTION
D
The Advanced Power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-35
V
±20
V
3a
-14.5
A
3a
-12
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-50
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL DATA
Symbol
Rthj-a
08/04/2007 Rev.1.00
Parameter
Thermal Resistance Junction-ambient
3a
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Max
Value
Unit
50
℃/W
1
SSM4409GEM
o
ELECTRICAL CHARACTERISTICS @TJ=25
Symbol
Parameter
C (unless otherwise specified )
Test Conditions
Min.
Typ.
Max. Units
-35
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-7A
-
-
7.5
mΩ
VGS=-4V, ID=-7A
-
-
15
mΩ
-0.8
-
-2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=VGS, ID=-250uA
VDS=-10V, ID=-7A
-
13
-
S
o
VDS=-30V, VGS=0V
-
-
-10
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±30
uA
ID=-14A
-
55
90
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-30V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
30
-
nC
VDS=-15V
-
18
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
160
-
ns
tf
Fall Time
RD=15Ω
-
110
-
ns
Ciss
Input Capacitance
VGS=0V
-
4100 6600
pF
Coss
Output Capacitance
VDS=-25V
-
860
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
770
-
pF
Min.
Typ.
IS=-14A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
Max. Units
trr
Reverse Recovery Time
IS=-14A, VGS=0V,
-
43
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
37
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board （a）, t <10sec
(a) 1 in 2 pad of
2 oz copper
(b) 125℃
℃/W when
mounted on a 0.003
in2 pad of 2 oz copper
08/04/2007 Rev.1.00
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2
SSM4409GEM
50
50
- 10V
-5.0 V
-4.5 V
-3.0 V
-ID , Drain Current (A)
40
40
30
20
V G = - 2.5 V
30
V G = - 2.5 V
20
10
10
0
0
0
1
2
3
0
4
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
26
ID=-7A
T A =25 ℃
Normalized RDS(ON)
21
RDS(ON\) (mΩ )
-10V
- 5.0 V
- 4.5 V
- 3.0 V
T A = 150 o C
-ID , Drain Current (A)
o
T A = 25 C
16
I D =-7A
V G =-10V
1.4
1.0
11
0.6
6
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
14
12
1.4
T j =150 o C
Normalized -VGS(th) (V)
10
T j =25 o C
-IS(A)
8
6
4
1.0
0.6
2
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
08/04/2007 Rev.1.00
50
100
150
T j , Junction Temperature ( C)
Fig 5. Forward Characteristic of
Reverse Diode
0
o
-V SD , Source-to-Drain Voltage (V)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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3
SSM4409GEM
C iss
ID= -14A
V DS = - 30 V
12
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
16
8
C oss
C rss
1000
4
100
0
0
30
60
90
1
120
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
1ms
10
10ms
1
-ID (A)
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=125oC/W
Single Pulse
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
QG
T j =150 o C
40
-4.5V
QGS
QGD
20
Charge
Q
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
08/04/2007 Rev.1.00
Fig 12. Gate Charge Waveform
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SSM4409GEM
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
08/04/2007 Rev.1.00
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5