SDR2060UFBT Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 20 AMP Ultra Fast Rectifier Designer’s Data Sheet 600 Volt 60 nsec Part Number / Ordering Information 1/ SDR20 __ __ __ __ │ │ │ └ Screening2/ │ │ │ __ = Not Screened TX = TX Level │ │ │ TXV = TXV │ │ │ S = S Level │ │ │ Package Type │ │ └ BT = Button │ │ Reverse Recovery │ └ UF = Ultra Fast │ Voltage └ 60 = 600 V Features: • • • • • • • • • • Replaces DO-4 and DO-5 Ultra Fast Recovery Low Reverse Leakage Current 3/ Hermetically Sealed Void-Free Construction Monolithic Single Chip Construction High Surge Rating Low Thermal Resistance Higher Voltages Available - Contact Factory Replacement for MSARS20E060G TX, TXV, and Space Level Screening Available MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60Hz Sine Wave, BT Tc≤100°C ) Peak Surge Current (8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between o Pulses, TA=25 C) Operating and Storage Temperature Maximum Thermal Resistance Junction to Case Symbol Value Units VRRM VRWM VR 600 Volts IO 20 Amps IFSM 100 Amps Top & Tstg -65 to +175 RθJC 2.0 Notes: 1/ For ordering information, price, operating curves, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ PIND testing not required on void free devices per MIL-PRF-19500. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0146A o o C C/W Button (BT) DOC SDR2060UFBT Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS (Ta = 25 oC unless specified) Instantaneous Forward Voltage Drop IF = 5A pulsed Instantaneous Forward Voltage Drop IF = 10A pulsed Instantaneous Forward Voltage Drop IF = 20A pulsed Instantaneous Forward Voltage Drop IF = 20A pulsed TA = -55oC Instantaneous Forward Voltage Drop o IF = 20A pulsed TA = 125 C Instantaneous Forward Voltage Drop IF = 10A pulsed TA = -55oC Reverse Leakage Current Rated VR, pulsed Reverse Leakage Current o Rated VR, pulsed, TA = 125 C) Breakdown Volatge IR, = 100 μA Junction Capacitance (VR =10 VDC, f = 1MHz, TA = 25oC) Reverse Recovery Time (IF = 0.5A, IR = 1.0 A, IRR = 0.25A, TA = 25oC) Symbol Max Unit VF1 1.25 V VF2 1.40 V VF3 1.65 V VF4 2.05 V VF5 1.70 V VF4 1.45 V IR1 5 μA IR2 200 μA BVR 600 V (min) CJ 80 pF trr 55 nsec Dim Min Max A 0.125 0.150 A1 — 0.020 ∅B — 0.190 C 0.190 0.210 CASE OUTLINES: Button (BT) A A1 OPTIONAL TAB PROFILE ØB ØP1 C1 C P4 P2 C1 P1 0.145 0.155 P2 0.055 0.075 P4 T R T 2x R NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 0.280 REF 0.060 REF 0.008 0.012 0.015 REF P3 DATA SHEET #: RC0146A DOC