SHF1160 & SHF1160SMS thru SHF1190 & SHF1190SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SHF11 __ __ __ │ │ │ │ │ │ │ │ └ │ │ │ │ └ └ Screening 30 nsec 1 Amp Hyper Fast Rectifier 600 - 900 V 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package Type __ = Axial Leaded SMS = Surface Mount Square Tab Family/Voltage 60 = 600 V 70 = 700 V 80 = 800 V 90 = 900 V Features: Hyper fast recovery: 30 nsec maximum PIV to 900 Volts, consult factory for higher voltages Low reverse leakage current Hermetically sealed Void free construction For high efficiency applications Higher voltages available – consult factory TX, TXV, and S level screening available2/ Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SHF1160 SHF1170 SHF1180 SHF1190 Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25°C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25°C) Operating & Storage Temperature Maximum Thermal Resistance Junction to Leads, L = 3/8 Junction to Tabs NOTES: Symbol Value Units VRRM VRSM VR 600 700 800 900 Volts IO 1.0 Amps IFSM 25 Amps TOP & TSTG -65 to +175 ºC RθJE 50 28 ºC/W Axial Lead Diode SMS 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0157A DOC SHF1160 & SHF1160SMS thru SHF1190 & SHF1190SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic Instantaneous Forward Voltage Drop (IF = 1ADC, TA = 25ºC pulsed) Instantaneous Forward Voltage Drop (IF = 1ADC, TA = -55ºC pulsed) Reverse Leakage Current (Rated VR, TA = 25ºC pulsed) Reverse Leakage Current (Rated VR, TA = 100ºC pulsed) Reverse Recovery Time (IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC) Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) Symbol Max Units VF 1.9 VDC VF 2.4 VDC IR 10 µA IR 200 µA tRR 30 nsec CJ 18 pF Case Outline: (Axial) D B ØC D Case Outline: (SMS) B A ØA DIM MIN MAX A B C D 0.100” 0.130” 0.027” 1.00” 0.135” 0.185” 0.033” -- DIM MIN MAX A B C D 0.140” 0.180” 0.020” 0.002” 0.155” 0.230” 0.030” -- A C D NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0157A DOC