SDR3KHF & SDR3KHFSMS thru SDR3NHF & SDR3NHFSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SDR3 ___ HF ___ ___ Screening 2/ │ │ └ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV │ │ S = S Level │ │ Package Type ___ = Axial │ └ SMS = Surface Mount Square Tab │ Family/Voltage └ K = 800 V M = 1000 V N = 1200 V 3 AMP 800 - 1200 V 35 nsec Hyper Fast Rectifier Features: • • • • • • • • Hyper Fast Recovery: 35 nsec maximum PIV to 1200 Volts Hermetically Sealed Void Free Construction For High Efficiency Applications Single Chip Construction Low Reverse Leakage TX, TXV, S Level screening Available2/ Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR3KHF SDR3MHF SDR3NHF Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, TL = 25 °C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TL = 25 °C) Operating & Storage Temperature Maximum Thermal Resistance Junction to Leads, L = 1/4" Junction to Tabs 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flow Available on Request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Symbol Value Units VRRM VRSM VR 800 1000 1200 Volts Io 3.0 Amps IFSM 70 Amps TOP & TSTG -65 to +175 ºC RθJE 16 12 ºC/W Axial Lead Diode DATA SHEET #: RC0097B SMS DOC SDR3DHF & SDR3DHFSMS thru SDR3NHF & SDR3NHFSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic Instantaneous Forward Voltage Drop (TA = 25ºC, pulsed) Instantaneous Forward Voltage Drop (TA = -55ºC, pulsed) Reverse Leakage Current (Rated VR, TA = 25ºC, pulsed) Reverse Leakage Current (Rated VR, TA = 100ºC, pulsed) Reverse Recovery Time (IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC) Junction Capacitance (VR = 10VDC, f = 1MHz, TA = 25ºC) Case Outline: (Axial) IF IF IF IF = 1A = 3A = 1A = 3A Symbol Max VF1 VF3 VF4 1.9 3.1 2.0 3.2 IR1 10 µA IR2 300 µA tRR 35 nsec CJ 30 pF VF2 DIM A B C D Case Outline: (SMS) DIM A B C D NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0097B Units VDC VDC MIN –– –– 0.047” 0.950” MAX 0.165” 0.220” 0.053” –– MIN 0.172” 0.180” 0.022” 0.002” MAX 0.180” 0.280” 0.028” -- DOC