2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications SST13LP012.4 GHz / 5 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 28 dB gain across 2.4-2.5 GHz over temperature 0°C to +85°C – Typically 30-33 dB gain across 4.9-5.8 GHz over temperature 0°C to +85°C • High linear output power: – >29 dBm P1dB across 2.4-2.5 GHz (Exceeding maximum rating of average output power, never measure with CW source! Pulsed single-tone source with <50% duty cycle is recommended.) – Meets 802.11g OFDM ACPR requirement up to 23 dBm – Added EVM~4% up to 21 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 23 dBm – ~28 dBm P1dB (Pulsed single-tone signal) across 4.9~5.8 GHz – Meets 802.11a OFDM ACPR requirement up to 22 dBm over whole band – Added EVM~4% up to 20 dBm for 54 Mbps 802.11a signal • High power-added efficiency/Low operating current for both 802.11a/b/g applications – ~24%/250 mA @ POUT = 23 dBm for 802.11g – ~23%/260 mA @ POUT = 23 dBm for 802.11b – ~9.5%/320 mA @ POUT = 20 dBm for 802.11a • Built-in Ultra-low IREF power-up/down control – IREF <3 mA • Low idle current – ~70 mA ICQ (802.11b/g) – ~170 mA ICQ (802.11a) • High-speed power-up/down – Turn on/off time (10%~90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns • High temperature stability – ~1 dB gain/power variation between 0°C to +85°C across 2.4~2.5 GHz – ~3.5/1.5 dB gain/max linear power variation between 0°C to +85°C across 4.9~5.8 GHz – ~1 dB detector variation over 0°C to +85°C • Low shut-down current (< 0.1 µA) • On-chip power detection • 20 dB dynamic range on-chip power detection • Simple input/output matching • Packages available – 24-contact WQFN (4mm x 4mm) – Non-Pb (lead-free) packages available APPLICATIONS: • • • • • • WLAN (IEEE 802.11a/g/b) Japanese WLAN HyperLAN2 Multimedia Home RF Cordless phones PRODUCT DESCRIPTION The SST13LP01 is a high-gain, high-performance, dualband power amplifier IC based on the highly-reliable InGaP/GaAs HBT technology. SST13LP01 also has wide-range (>20 dB), temperaturestable (~1 dB over 85°C), single-ended/differential power detectors which lower users’ cost on power control. The SST13LP01 device can be easily configured for highpower applications with superb power-added efficiency while operating over the 802.11a/b/g frequency band for U.S., European, and Japanese markets (2.4-2.5 GHz and 4.9-5.8 GHz. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultra-low reference current (total IREF <3 mA) makes the SST13LP01 controllable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating current, make the SST13LP01 ideal for the final stage power amplification in both batterypowered 802.11a/b/g WLAN transmitter and access point applications. The SST13LP01 has excellent linearity, typically ~4% added EVM at 21 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm and 802.11b spectrum mask at 23 dBm. For 802.11a operation, the SST13LP01 has demonstrated typically ~4% added EVM at 20 dBm output power while meeting 802.11a spectrum mask at 22 dBm. The ©2005 SST Communications Corp. S71287-00-000 11/05 1 The SST13LP01 is offered in a 24-contact WQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions. The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications FUNCTIONAL BLOCKS NC VCCb_LB VREF12_LB VCC1_LB NC Det_LB FUNCTIONAL BLOCK DIAGRAM 24 23 22 21 20 19 18 RFOUT_LB 2 17 GND NC 3 16 GND NC 4 15 RFOUT_HB RFIN_HB 5 14 RFOUT_HB VREF123_HB 6 13 Det_HB RFIN_LB 1 NC LB Bias Circuit HB Bias Circuit 7 8 9 10 11 12 VCCb_HB NC VCC1_HB VCC2_HB VCC3_HB NC ©2005 SST Communications Corp. 1287 B1.2 S71287-00-000 2 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications RFIN_LB 1 NC 2 NC 3 NC 4 RFIN_HB VREF123_HB NC VCCb_LB VREF12_LB VCC1_LB NC Det_LB PIN ASSIGNMENTS 24 23 22 21 20 19 18 RFOUT_LB 17 NC 16 NC 15 RFOUT_HB 5 14 RFOUT_HB 6 13 Det_HB Top View (contacts facing down) RF and DC GND 0 7 8 9 10 11 12 VCCb_HB NC VCC1_HB VCC2_HB VCC3_HB NC 1287 P1.2 FIGURE 1: PIN ASSIGNMENTS FOR 16-CONTACT WQFN ©2005 SST Communications Corp. S71287-00-000 3 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications PIN DESCRIPTIONS TABLE 1: PIN DESCRIPTION Symbol Pin No. Pin Name Type Ground Function GND 0 RFIN_LB 1 Ground pad NC 2 No Connection Unconnected pin NC 3 No Connection Unconnected pin NC 4 No Connection RFIN_HB 5 I RF input for Low Band, DC decoupled Unconnected pin I RF input for High Band, DC decoupled VREF123_HB 6 PWR 1st, 2nd, and 3rd stage current control for High Band VCCb_HB 7 PWR Power Supply, Bias circuit for High Band NC 8 No Connection VCC1_HB 9 Power Supply Unconnected pin PWR 1st stage Power supply for High Band VCC2_HB 10 Power Supply PWR 2nd stage Power supply for High Band VCC3_HB 11 Power Supply PWR 3rd stage Power supply for High Band NC 12 No Connection Det_HB 13 O Detector Voltage Output for High Band RFOUT_HB 14 O RF output for High Band, DC decoupled RFOUT_HB 15 O RF output for High Band, DC decoupled NC 16 No Connection Unconnected pin NC 17 No Connection Unconnected pin Unconnected pin RFOUT_LB 18 O RF output for Low Band, DC decoupled Det_LB 19 O Detector Voltage Output for Low Band NC 20 No Connection VCC1_LB 21 Power Supply Unconnected pin PWR 1st stage Power supply for Low Band VREF12_LB 22 PWR Power Supply, Bias circuit for Low Band VCCb_LB 23 PWR Current Control for Low Band NC 24 No Connection Unconnected pin T1.1 1287 ©2005 SST Communications Corp. S71287-00-000 4 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 2 through 28 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 7, 9, 10, 11, 21, and 23 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V Reference Voltage at pins 6 and 22 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds OPERATING RANGE Range Ambient Temp VCC Industrial -40°C to +85°C 3.3V ©2005 SST Communications Corp. S71287-00-000 5 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications For 802.11b/g Operation TABLE 2: DC ELECTRICAL CHARACTERISTICS Symbol Parameter VCC Supply Voltage at pin 21 ICC Supply Current Min. Typ Max. Unit 3.0 3.3 3.6 V for 802.11g, 23 dBm 250 mA for 802.11b, 23 dBm 260 mA ICQ Idle current for 802.11g to meet EVM<4% @ 21 dBm IOFF Shut down current VREG Reference Voltage at pin 22, with 105Ω resistor 70 2.75 Test Conditions mA 2.85 0.1 µA 2.95 V T2.1 1287 TABLE 3: AC ELECTRICAL CHARACTERISTICS FOR CONFIGURATION Symbol Parameter Min. FL-U Frequency range 2400 G Small signal gain 27 GVAR1 Gain variation over band (2400~2485 MHz) GVAR2 Gain ripple over channel (20 MHz) ACPR Meet 11b spectrum mask Meet 11g OFDM 54 MBPS spectrum mask Added EVM POUT = 22 dBm output with 54 MBPS 11g OFDM signal 2f, 3f, 4f, 5f Harmonics at 22 dBm, without trapping capacitors Typ 28 Max. Unit 2485 MHz 29 dB ±0.5 dB 0.2 dB 22 23 dBm 22 23 dBm 4 % -40 dBc T3.1 1287 ©2005 SST Communications Corp. S71287-00-000 6 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications For 802.11a Operation TABLE 4: DC ELECTRICAL CHARACTERISTICS Symbol Parameter VCC Supply Voltage at pins 7, 9, 10, 11 ICC Supply Current ICQ Idle current IOFF Shut down current VREG Reference Voltage at pin 6, with 0Ω resistor Total IREG Total Reference Current for 802.11a, 21 dBm at VCC = 3.3V Min. Typ Max. Unit 3.0 3.3 3.6 V 300 340 mA 170 mA <0.1 2.8 Test Conditions µA 2.9 3.0 V 2 3 mA T4.1 1287 TABLE 5: AC ELECTRICAL CHARACTERISTICS FOR CONFIGURATION Symbol Parameter Min. Typ Max. Unit 4900 5800 MHz 28 34 dB FL-U Frequency range G Linear gain across 4.9-5.9 GHz, 0°C to +85°C GVAR Gain variation over band (4.9-5.8 MHz) 4 dB Gain variation over band (4.9-5.38 MHz) 2 dB Gain variation over band (5.7-5.8 MHz) 0.5 dB Gain variation over channel (20 MHz) 0.2 dB 4 % 22 dBm Linearity Added EVM @ POUT = 20 dBm with 54 MBPS 11a OFDM signal when operating at 3.3V VCC Output power level with 802.11a mask compliance across 4.9-5.8 GHz 2f, 3f, 4f, 5f Harmonics at 22 dBm 21 -40 dBc T5.1 1287 ©2005 SST Communications Corp. S71287-00-000 7 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications S12 versus Frequency S11 versus Frequency 0 0 -5 -10 -20 -15 S12 (dB) S11 (dB) -10 -20 -25 -30 -35 -30 -40 -50 -60 -40 -70 -45 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 -80 0.0 11.0 1.0 2.0 3.0 Frequency (GHz) 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 9.0 10.0 11.0 Frequency (GHz) S21 versus Frequency S22 versus Frequency 0 40 30 -5 10 0 -10 -10 -15 -20 -20 -25 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 -30 0.0 11.0 Frequency (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 1287 SParmLowB.0 S22 (dB) S21 (dB) 20 Frequency (GHz) FIGURE 2: LOW BAND S-PARAMETERS ©2005 SST Communications Corp. S71287-00-000 8 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications TYPICAL PERFORMANCE CHARACTERISTICS FOR 802.11B/G TEST CONDITIONS: VCC = 3.3V, VREG_LB = 2.85V, TA = 25°C, 54 MPBS 802.11G OFDM SIGNAL EVM versus Output Power 10 9 Freq = 2.412 G Hz 8 Freq = 2.442 G Hz 7 EVM (%) Freq = 2.484 G Hz 6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 23 24 1287 F03.0 FIGURE 3: LOW BAND EVM VERSUS OUTPUT POWER Supply Current versus Output Power Supply Current (mA) 275 250 Freq = 2 .412 G Hz 225 Freq = 2 .442 G Hz 200 Freq = 2 .484 G H z 175 150 125 100 75 9 10 11 12 13 14 15 16 17 18 19 Output Power (dBm) 20 21 22 23 24 1287 F04.0 FIGURE 4: LOW BAND POWER SUPPLY CURRENT VERSUS OUTPUT POWER ©2005 SST Communications Corp. S71287-00-000 9 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications PAE versus Output Power 26 24 Freq = 2.412 G Hz PAE (%) 22 20 Freq = 2.442 G Hz 18 Freq = 2.484 G Hz 16 14 12 10 8 6 4 2 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 1287 F05.0 Output Power (dBm) FIGURE 5: LOW BAND PAE VERSUS OUTPUT POWER 10 Freq = 2.412 GHz 0 Freq = 2.442 GHz Amplitude (dB) -10 Freq = 2.484 GHz -20 -30 -40 -60 -70 2.35 POUT = 23 dBm DC current = 250 mA 2.40 2.45 2.50 1287 F06.0 -50 2.55 Frequency (GHz) FIGURE 6: LOW BAND 802.11G SPECTRUM MASK AT 23 DBM WITH DC CURRENT AT 250 MA ©2005 SST Communications Corp. S71287-00-000 10 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, VREG_LB = 2.85V, TA = 25°C, 1 MPBS 802.11B CCK SIGNAL 10 Freq = 2.412 GHz 0 Freq = 2.442 GHz Amplitude (dB) -10 Freq = 2.484 GHz POUT = 23 dBm DC current 265 mA -20 -30 -40 -50 1287 F07.0 -60 -70 -80 2.35 2.40 2.45 2.50 2.55 Frequency (GHz) FIGURE 7: LOW BAND 802.11B SPECTRUM MASK AT 23 DBM WITH DC CURRENT OF 265 MA ©2005 SST Communications Corp. S71287-00-000 11 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications LOW BAND POWER DETECTOR CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, VREG_LB = 2.85V, TA = 25°C, 54 MPBS 802.11G OFDM SIGNAL Detector Voltage versus Output Power 1.50 1.30 1.20 1.10 1.00 0.90 Freq = 2.412 GHz (0 C) Freq = 2.412 GHz (25 C) Freq =2.412 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min) 0.80 0.70 1287 F09.0 Detector Voltage (V) 1.40 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Output Power (dBm) FIGURE 8: LOW BAND CH1 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES Detector Voltage versus Output Power 1.50 1.30 1.20 1.10 1.00 0.90 Freq = 2.442 GHz (0 C) Freq = 2.442 GHz (25 C) Freq = 2.442 GHz (85C) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min) 0.80 0.70 1287 F10.0 Detector Voltage (V) 1.40 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Output Power (dBm) FIGURE 9: LOW BAND CH7 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES ©2005 SST Communications Corp. S71287-00-000 12 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications Detector Voltage versus Output Power 1.50 1.30 1.20 1.10 1.00 0.90 Freq = 2.484 GHz (0 C) Freq = 2.484 GHz (25 C) Freq = 2.484 GHz (85 C) Freq = 2.484 GHz (Max) Freq = 2.484 GHz (Min) 0.80 0.70 1287 F11.0 Detector Voltage (V) 1.40 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 24 26 Output Power (dBm) FIGURE 10: LOW BAND CH14 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES Detector Voltage versus Output Power Freq = 2.412 GHz (25 C) Freq = 2.442 GHz (25 C) Freq = 2.484 GHz (25 C) Freq = 2.412 GHz (0 C) Freq = 2.442 GHz (0 C) Freq = 2.484 GHz (0 C) Freq =2.412 GHz (85 C) Freq = 2.442 GHz (85C) Freq = 2.484 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min) Freq = 2.484 GHz (Max) Freq = 2.484 GHz (Min) 1.50 Detector Voltage (V) 1.40 1.30 1.20 1.10 1.00 0.90 1287 F12.0 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 Output Power (dBm) FIGURE 11: LOW BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES ©2005 SST Communications Corp. S71287-00-000 13 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications LOW BAND POWER DETECTOR CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, VREG_LB = 2.85V, TA = 25°C, 1 MPBS 802.11G CCK SIGNAL Detector Voltage versus Output Power 1.50 1.30 1.20 1.10 1.00 0.90 Freq = 2.412 GHz (0 C) Freq = 2.412 GHz (25 C) Freq =2.412 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min) 0.80 0.70 1287 F13.0 Detector Voltage (V) 1.40 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Output Power (dBm) FIGURE 12: LOW BAND CH1 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES Detector Voltage versus Output Power 1.50 1.30 1.20 1.10 1.00 0.90 Freq = 2.442 GHz (0 C) Freq = 2.442 GHz (25 C) Freq = 2.442 GHz (85C) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min) 0.80 0.70 1287 F14.0 Detector Voltage (V) 1.40 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Output Power (dBm) FIGURE 13: LOW BAND CH7 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES ©2005 SST Communications Corp. S71287-00-000 14 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications Detector Voltage versus Output Power 1.50 1.30 1.20 1.10 1.00 0.90 Freq = 2.484 GHz (0 C) Freq = 2.484 GHz (25 C) Freq = 2.484 GHz (85 C) Freq = 2.484 GHz (Max) Freq = 2.484 GHz (Min) 0.80 0.70 1287 F15.0 Detector Voltage (V) 1.40 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 24 26 Output Power (dBm) FIGURE 14: LOW BAND CH14 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES Detector Voltage versus Output Power Freq = 2.412 GHz (25 C) Freq = 2.442 GHz (25 C) Freq = 2.484 GHz (25 C) Freq = 2.412 GHz (0 C) Freq = 2.442 GHz (0 C) Freq = 2.484 GHz (0 C) Freq =2.412 GHz (85 C) Freq = 2.442 GHz (85C) Freq = 2.484 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min) Freq = 2.484 GHz (Max) Freq = 2.484 GHz (Min) 1.50 Detector Voltage (V) 1.40 1.30 1.20 1.10 1.00 0.90 1287 F16.0 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 Output Power (dBm) FIGURE 15: LOW BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES ©2005 SST Communications Corp. S71287-00-000 15 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications S12 versus Frequency S11 versus Frequency 0 0 -10 -5 S12 (dB) S11 (dB) -20 -10 -15 -20 -30 -40 -50 -60 -25 -70 -30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -80 10.0 0.0 Frequency (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 8.0 9.0 10.0 Frequency (GHz) S21 versus Frequency S22 versus Frequency 40 0 30 -5 -10 0 -10 -20 -15 1287 SParmHighB.0 10 S22 (dB) S21 (dB) 20 -20 -25 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -30 10.0 0.0 Frequency (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Frequency (GHz) FIGURE 16: HIGH BAND S-PARAMETERS ©2005 SST Communications Corp. S71287-00-000 16 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications TYPICAL PERFORMANCE CHARACTERISTICS FOR 802.11A TEST CONDITIONS: VCC = 3.3V, VREG_HB = 2.9V, TA = 25°C, 54 MPBS 802.11A OFDM SIGNAL EVM versus Output Power 10 9 Fre q = 4.92 GHz 8 Fre q = 5.18 GHz Fre q = 5.32 GHz 7 Fre q = 5.805 GHz 6 EVM (%) 5 4 3 1287 F17.0 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) FIGURE 17: HIGH BAND EVM VERSUS OUTPUT POWER Supply Current versus Output Power 425 Freq = 4.92 GHz 400 Freq = 5.18 GHz Supply Current (mA) 375 Freq = 5.32 GHz 350 Freq = 5. 805 GHz 325 300 275 250 1287 F18.0 225 200 175 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) FIGURE 18: HIGH BAND POWER SUPPLY CURRENT VERSUS OUTPUT POWER ©2005 SST Communications Corp. S71287-00-000 17 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications PAE versus Output Power 14 12 Fre q = 4.92 GHz Fre q = 5.18 GHz 10 PAE (%) Fre q = 5.32 GHz Fre q = 5.805 GHz 8 6 1287 F19.0 4 2 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) FIGURE 19: HIGH BAND PAE VERSUS OUTPUT POWER 10 0 POUT = 22 dBm DC current = 385 mA Amplitude (dB) -10 -20 -30 -40 1287 F20.0 -50 -60 -70 4.85 4.87 4.89 4.91 4.93 4.95 4.97 4.99 Frequency (GHz) FIGURE 20: HIGH BAND 802.11A SPECTRUM MASK AT 4.92 GHZ AT OUTPUT POWER 22 DBM WITH DC CURRENT AT 385 MA ©2005 SST Communications Corp. S71287-00-000 18 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications 10 POUT = 22 dBm 0 DC current = 375 mA Amplitude (dB) -10 -20 -30 -40 1287 F21.0 -50 -60 -70 5.11 5.13 5.15 5.17 5.19 5.21 5.23 5.25 Frequency (GHz) FIGURE 21: HIGH BAND 802.11A SPECTRUM MASK AT 5.18 GHZ AT OUTPUT POWER 22 DBM WITH DC CURRENT AT 375 MA 10 POUT = 22 dBm 0 DC current = 365 mA Amplitude (dB) -10 -20 -30 -40 1287 F22.0 -50 -60 -70 5.25 5.27 5.29 5.31 5.33 5.35 5.37 5.39 Frequency (GHz) FIGURE 22: HIGH BAND 802.11A SPECTRUM MASK AT 5.32 GHZ AT OUTPUT POWER 22 DBM WITH DC CURRENT AT 365 MA ©2005 SST Communications Corp. S71287-00-000 19 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications 10 POUT = 22 dBm 0 DC current = 395 mA Amplitude (dB) -10 -20 -30 -40 1287 F23.0 -50 -60 -70 5.74 5.76 5.78 5.80 5.82 5.84 5.8 6 5.88 Frequency (GHz) FIGURE 23: HIGH BAND 802.11A SPECTRUM MASK AT 5.805 GHZ AT OUTPUT POWER 22 DBM WITH DC CURRENT AT 395 MA ©2005 SST Communications Corp. S71287-00-000 20 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications HIGH BAND POWER DETECTOR CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, VREG_HB = 2.9V, TA = 25°C, 54 MPBS 802.11A OFSM SIGNAL Detector Voltage versus Output Power 1.80 1.60 1.50 1.40 1.30 1.20 1.10 1.00 0.90 Freq = 4.92 GHz (0 C) 0.80 Freq = 4.92 GHz (25 C) 0.70 Freq = 4.92 GHz (85 C) 1287 F24.0 Detector Voltage (V) 1.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power (dBm) FIGURE 24: HIGH BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE AT 4.92 GHZ Detector Voltage versus Output Power 1.80 1.70 1.50 1.40 1.30 1.20 1.10 1.00 0.90 Freq = 5.18 GHz (0 C) 0.80 Freq = 5.18 GHz (25 C) 0.70 Freq = 5.18 GHz (85C) 0.60 0 2 4 6 8 10 12 14 16 18 20 22 1287 F25.0 Detector Voltage (V) 1.60 24 Output Power (dBm) FIGURE 25: HIGH BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE AT 5.18 GHZ ©2005 SST Communications Corp. S71287-00-000 21 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications Detector Voltage versus Output Power 1.80 1.70 1.50 1.40 1.30 1.20 1.10 1.00 0.90 Freq = 5.32 GHz (0 C) 0.80 Freq = 5.32 GHz (25 C) 0.70 Freq = 5.32 GHz (85 C) 1287 F26.0 Detector Voltage (V) 1.60 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power (dBm) FIGURE 26: HIGH BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE AT 5.32 GHZ Detector Voltage versus Output Power 1.80 1.70 1.50 1.40 1.30 1.20 1.10 1.00 0.90 Freq = 5.805 GHz (0 C) 0.80 Freq = 5.805 GHz (25 C) 0.70 Freq = 5.805 GHz (85 C) 1287 F27.0 Detector Voltage (V) 1.60 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power (dBm) FIGURE 27: HIGH BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE AT 5.805 GHZ ©2005 SST Communications Corp. S71287-00-000 22 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications Detector Voltage versus Output Power 1.80 Freq = 4.92 GHz (25 C) Freq = 5.18 GHz (25 C) Freq = 5.32 GHz (25 C) Freq = 5.805 GHz (25 C) Freq = 4.92 GHz (0 C) Freq = 5.18 GHz (0 C) Freq = 5.32 GHz (0 C) Freq = 5.805 GHz (0 C) Freq = 4.92 GHz (85 C) Freq = 5.18 GHz (85C) Freq = 5.32 GHz (85 C) Freq = 5.805 GHz (85 C) 1.70 1.50 1.40 1.30 1.20 1.10 1.00 0.90 1287 F28.0 Detector Voltage (V) 1.60 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power (dBm) FIGURE 28: HIGH BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE AND OVER FREQUENCY ©2005 SST Communications Corp. S71287-00-000 23 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications Vcc_LB C3 10uF C4 0.1uF R1 105Ω C5 0.1uF Det_LB Vreg_LB 24 23 22 21 20 L1 12nH 19 50Ω / 85 mil 50Ω / 125 mil RFin_LB 1 C1 2pF C7 0.1uF C6 10pF C2 100pF RFout_LB 18 LB Bias Circuit 2 17 3 16 4 15 RFin_HB 5 14 Vreg_HB 6 C9 2.4pF C8 47pF 80 x 60 mil 50Ω 50Ω C18 100pF 13 HB Bias Circuit 7 8 9 10 11 C10 0.3pF 12 C14 100pF C16 0.1uF C12 0.1uF C13 0.1 uF C15 0.1uF RFout_HB Det_HB C11 10 pF Vcc_HB 1287 Schematic1.0 C17 10uF Operating Conditions: Vreg_LB = 2.85V, Vcc_LB = 3.3V, Vreg_HB = 2.9V, Vcc_HB = 3.3V FIGURE 29: TYPICAL APPLICATION ©2005 SST Communications Corp. S71287-00-000 24 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications PRODUCT ORDERING INFORMATION SST13LP SSTxxLP 01 xx - QD XX F X Environmental Attribute F1 = non-Pb contact (lead) finish Package Modifier D = 24 contact Package Type Q = WQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 3 = 2.4 GHz / 5 GHz Dual-Band Product Line 1 = SST Communications 1. Environmental suffix “F” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”. Valid combinations for SST13LP01 SST13LP01-QDF SST13LP01 Evaluation Kits SST13LP01-QDF-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2005 SST Communications Corp. S71287-00-000 25 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications PACKAGING DIAGRAMS TOP VIEW SIDE VIEW BOTTOM VIEW See notes 2 and 3 0.2 Pin #1 Pin #1 2.3 4.00 ± 0.08 0.075 4.00 ± 0.08 0.05 Max 0.5 BSC 2.3 0.30 0.18 0.45 0.35 0.80 0.70 1mm 24-wqfn-4x4-QD-1.2 Note: 1. Complies with JEDEC JEP95 MO-220J, variant WGGD-4 except external paddle dimensions. 2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). 24-CONTACT VERY-VERY-THIN-PROFILE QUAD FLAT NO-LEAD (WQFN) SST PACKAGE CODE: QD TABLE 6: REVISION HISTORY Revision 00 Description • SST conversion of data sheet GP1301 Date Nov 2005 ©2005 SST Communications Corp. S71287-00-000 26 11/05 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications CONTACT INFORMATION Marketing SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605 Sales NORTH AMERICA ASIA PACIFIC NORTH Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - North America Tel: 949-495-6437 Fax: 949-495-6364 E-mail: [email protected] SST Macao H. H. Chang Senior Director, Sales Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: (853) 706-022 Fax: (853) 706-023 E-mail: [email protected] EUROPE ASIA PACIFIC SOUTH Silicon Storage Technology Ltd. Ralph Thomson Applications Manager Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: [email protected] SST Communications Co. Sunny Tzeng Sales Manager 4F-2, No. 24, Lane 123, Sec.6, Min Chuan E. Rd Taipei 114, Taiwan, R.O.C. Tel: +886-22795-6877 Ext. 163 Fax: +886-9792-1241 E-mail: [email protected] JAPAN KOREA SST Japan Jun Kamata Sales Director 9F Toshin-Tameike Bldg, 1-1-14 Akasaka, Minato-ku, Tokyo, Japan 107-0052 Tel: (81) 3-5575-5515 Fax: (81) 3-5575-5516 Email: [email protected] SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: [email protected] Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 www.SuperFlash.com or www.sst.com ©2005 SST Communications Corp. S71287-00-000 27 11/05