2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5 GHz frequency band, it typically provides 32 dB gain with 26% power-added efficiency @ POUT = 24 dBm for 802.11g and 27% power-added efficiency @ POUT = 25 dBm for 802.11b. The SST12LP15A has excellent linearity while meeting 802.11g spectrum mask at 25 dBm. The power amplifier IC features easy boardlevel usage along with high-speed power-up/down control and is offered in 16contact VQFN package Features • High Gain: • High temperature stability – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C • High linear output power: • Low shut-down current (~1 µA) – >29 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5 – Meets 802.11g OFDM ACPR requirement up to 25 dBm – Added EVM~4% up to 23 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 25 dBm • High power-added efficiency/Low operating current for both 802.11g/b applications • On-chip power detection • 25 dB dynamic range on-chip power detection • Simple input/output matching • Packages available – 16-contact VQFN (3mm x 3mm) • All non-Pb (lead-free) devices are RoHS compliant – ~26%/300 mA @ POUT = 24 dBm for 802.11g – ~27%/350 mA @ POUT = 25 dBm for 802.11b • Built-in Ultra-low IREF power-up/down control – IREF ~2 mA Applications • WLAN (IEEE 802.11b/g/n) • Low idle current – ~80 mA ICQ • Home RF • High-speed power-up/down – Turn on/off time (10%-90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns ©2013 Silicon Storage Technology, Inc. – ~1 dB gain/power variation between 0°C to +85°C – ~1 dB detector variation over 0°C to +85°C • Cordless phones • 2.4 GHz ISM wireless equipment www.microchip.com DS75056A 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet Product Description The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. The SST12LP15A can be easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 32 dB gain with 26% power-added efficiency @ POUT = 24 dBm for 802.11g and 27% power-added efficiency @ POUT = 25 dBm for 802.11b. The SST12LP15A has excellent linearity, typically ~4% added EVM at 23 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 25 dBm. SST12LP15A also has wide-range (>25 dB), temperature-stable (~1 dB over 85°C), single-ended/differential power detectors which lower users’ cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP15A controllable by an on/ off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP15A ideal for the final stage power amplification in battery-powered 802.11b/g/n WLAN transmitter applications. The SST12LP15A is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. ©2013 Silicon Storage Technology, Inc. DS75056A 2 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet VCC1 NC VCC2 NC Functional Blocks 16 15 14 13 NC 1 12 VCC3 RFIN 2 11 RFOUT RFIN 3 10 RFOUT NC 4 Bias Circuit 9 5 6 7 8 Det VCCb VREF1 VREF2 Det_ref 1291 B1.0 Figure 1: Functional Block Diagram6 ©2013 Silicon Storage Technology, Inc. DS75056A 3 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet NC VCC1 NC VCC2 NC Pin Assignments 16 15 14 13 12 VCC3 1 Top View RFIN 2 RFIN 3 NC (contacts facing down) 11 RFOUT 10 RFOUT RF and DC GND 0 4 5 6 7 8 9 Det VCCb VREF1 VREF2 Det_ref 1291 16-vqfn P1.0 Figure 2: Pin Assignments for 16-contact VQFN Pin Descriptions Table 1: Pin Description Symbol GND Pin No. Type1 Pin Name Function 0 Ground The center pad should be connected to RF ground with several low inductance, low resistance vias. NC 1 No Connection RFIN 2 RFIN 3 NC 4 No Connection VCCb 5 Power Supply PWR Supply voltage for bias circuit VREF1 6 PWR 1st and 2nd stage idle current control VREF2 7 PWR 3rd stage idle current control Det_ref 8 O On-chip power detector reference Det 9 O On-chip power detector RFOUT 10 O RF output RFOUT 11 VCC3 12 Unconnected pins. I RF input, DC decoupled I RF input, DC decoupled Unconnected pins. O Power Supply NC 13 No Connection VCC2 14 Power Supply NC 15 No Connection VCC1 16 Power Supply RF output PWR Power supply, 3rd stage PWR Power supply, 2nd stage PWR Power supply, 1st stage Unconnected pins. Unconnected pins. T1.0 75056 1. I=Input, O=Output ©2013 Silicon Storage Technology, Inc. DS75056A 4 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet Electrical Specifications The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and current specifications. Refer to Figures 3 through 10 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Input power to pins 2 and 3 (PIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm Average output power (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 dBm Supply Voltage at pins 5, 12, 14, 16 (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V Reference voltage to pins 6 (VREF1) and pin 7 (VREF2) . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC Maximum Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150ºC Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds 1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating of average output power could cause permanent damage to the device. Table 2: Operating Range Range Ambient Temp VDD Industrial -40°C to +85°C 3.3V T2.1 75056 Table 3: DC Electrical Characteristics at 25ºC Symbol Parameter VCC Supply Voltage at pins 5, 12, 14, 16 ICC Supply Current Min. Typ Max. Unit 3.0 3.3 4.2 V for 802.11g, 24 dBm 300 mA for 802.11b, 25 dBm 350 mA ICQ Idle current for 802.11g to meet EVM<4% @ 23dBm 80 mA IOFF Shut down current 1 µA VREG1 Reference Voltage for 1st and 2nd Stage, with 270Ω resistor 2.85 2.90 2.95 V VREG2 Reference Voltage for 3rd Stage, with 100Ω resistor 2.85 2.90 2.95 V T3.1 75056 ©2013 Silicon Storage Technology, Inc. DS75056A 5 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet Table 4: AC Electrical Characteristics for Configuration at 25ºC Symbol Parameter Min. FL-U Frequency range in 802.11b/g applications (see Figure 11) 2400 POUT Output power @ PIN = -10 dBm 11b signals @ PIN = -10 dBm 11g signals G Small signal gain 31 GVAR1 Gain variation over each band (2400-2485 MHz) GVAR2 Gain ripple over channel (Gain variation over 20 MHz) ACPR Meet 11b spectrum mask 24 Meet 11g OFDM 54 MBPS spectrum mask 24 Added EVM @ 23 dBm output with 11g OFDM 54 MBPS signal 2f, 3f, 4f, 5f Harmonics at 22 dBm, without trapping capacitors Typ Max. Unit 2485 MHz 23 dBm 23 dBm 32 dB ±0.5 dB 0.2 dB 25 dBm 25 dBm 3.5 % -40 dBc T4.2 75056 ©2013 Silicon Storage Technology, Inc. DS75056A 6 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25°C Unless otherwise specified. S11 versus Frequency S12 versus Frequency 0 0 -10 -5 -20 -10 S12 (dB) S11 (dB) -30 -15 -40 -50 -20 -60 -25 -70 -80 -30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 7.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 6.0 7.0 Frequency (GHz) Frequency (GHz) S22 versus Frequency S21 versus Frequency 0 40 30 -5 20 -10 S22 (dB) S21 (dB) 10 0 -15 -10 -20 -20 -25 -30 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.0 1.0 2.0 3.0 4.0 5.0 Frequency (GHz) Frequency (GHz) 1291 S-Parms.0.1 Figure 3: S-Parameters ©2013 Silicon Storage Technology, Inc. DS75056A 7 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25°C, 54 Mbps 802.11g OFDM Signal EVM versus Output Power 10 9 Freq=2.412 GHz 8 Freq=2.442 GHz EVM (%) 7 Freq=2.484 GHz 6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) 1291 F4.0 Figure 4: EVM versus Output Power measured with “Data plus Sequence” channel estimation Power Gain versus Output Power 40 38 Power Gain (dB) 36 34 32 30 28 Freq=2.412 GHz 26 Freq=2.442 GHz 24 Freq=2.484 GHz 22 20 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) 1291 F5.0 Figure 5: Power Gain versus Output Power ©2013 Silicon Storage Technology, Inc. DS75056A 8 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet Supply Current versus Output Power 340 Supply Current (mA) 320 300 Freq=2.412 GHz 280 Freq=2.442 GHz 260 Freq=2.484 GHz 240 220 200 180 160 140 120 100 80 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) 1291 F6.0 Figure 6: Total Current Consumption for 802.11g Operation versus Output Power PAE (%) PAE versus Output Power 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) 1291 F7.0 Figure 7: PAE versus Output Power ©2013 Silicon Storage Technology, Inc. DS75056A 9 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet Detector Voltage versus Output Power 2.0 1.9 Freq=2.412 GHz Detector Voltage (V) 1.8 Freq=2.442 GHz 1.7 Freq=2.484 GHz 1.6 1.5 1.4 1.3 1.2 1.1 1.0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) 1291 F8.0 Figure 8: Detector Characteristic versus Output Power 10 Freq = 2.412 GHz 0 Freq = 2.442 GHz Amplitude (dB) -1 0 Freq = 2.484 GHz -2 0 -3 0 -4 0 1291 F09.0 -5 0 -6 0 -7 0 2.35 2.40 2.45 2.50 2.55 Frequency (GHz) Figure 9: 802.11g Spectrum Mask at 24 dBm, Total current 300 mA ©2013 Silicon Storage Technology, Inc. DS75056A 10 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA=25°C, 1 Mbps 802.11b CCK signal 10 Freq = 2.412 GHz 0 Freq = 2.442 GHz Amplitude (dB) -10 Freq = 2.484 GHz -20 -30 -40 -50 1291 F11.0 -60 -70 -80 2.35 2.40 2.45 2.50 2.55 Frequency (GHz) Figure 10:802.11b Spectrum Mask at 25 dBm, Total current 350 mA ©2013 Silicon Storage Technology, Inc. DS75056A 11 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet 0.1 µF 10 µF Vcc 100pF 100pF 12nH/0805 Inductor 16 50Ω /85mil 15 13 14 1 12 2 11 50Ω /120mil 50Ω RFout 50Ω RFin 3 2.7pF 10 2.2nH* Biascircuit 4 9 5 0.1 µF 6 7 Suggested operation conditions: 8 R3 100 Ω 100pF 100pF R1 270Ω 10pF 10pF R2 100Ω VREG 1 VREG 2 Det_ref Det 1 VCC = 3.3V 2. Center slug to RF ground 3. VREG1=VREG2=2.90V with R1=270Ω and R2=100Ω * Could be removed if -7 dB return loss is acceptable 1291 Schematic.0.7 Figure 11:Typical Schematic for High-Power, High-Efficiency 802.11b/g Applications ©2013 Silicon Storage Technology, Inc. DS75056A 12 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet Product Ordering Information SST 12 LP 15A - QVCE XX XX XXX - XXXX Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier C = 16 contact Package Type QV = VQFN Version Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = RF Products 1. Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”. Valid combinations for SST12LP15A SST12LP15A-QVCE SST12LP15A Evaluation Kits SST12LP15A-QVCE-K Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2013 Silicon Storage Technology, Inc. DS75056A 13 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet Packaging Diagrams TOP VIEW SIDE VIEW BOTTOM VIEW See notes 2 and 3 0.2 Pin #1 Pin #1 1.7 3.00 ± 0.075 1.7 0.5 BSC 0.075 0.45 0.35 0.05 Max 3.00 ± 0.075 1.00 0.80 0.30 0.18 1mm 16-vqfn-3x3-QVC-2.0 Note: 1. Complies with JEDEC JEP95 MO-220J, variant VEED-4 except external paddle nominal dimensions. 2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). Figure 12:16-contact Very-thin Quad Flat No-lead (VQFN) SST Package Code: QVC ©2013 Silicon Storage Technology, Inc. DS75056A 14 04/13 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet Table 5:Revision History Revision Description Date 00 • Initial release of data sheet Mar 2005 01 • • • • • • Updated values for gain and efficiency on page 1 Updated values for VREG1 and VREG2 in Table 3 on page 5 Removed stability parameter from Table 4 on page 6 Updated the typical application schematic on page 12 Updated QVC package drawing. Updated “Absolute Maximum Stress Ratings” on page 5 Mar 2006 02 • • Added information for 2.3-2.4 and 2.5-2.6 applications Removed leaded part numbers Jul 2006 03 • • • • • Updated “Features” and “Product Description” on page 2 Revised Table 3 on page 5 and Table 4 on page 6 Updated values in Figure 11 on page 12. Removed two schematics Updated Figures 3 - 8 Sep 2008 04 • Updated “Contact Information”. Feb 2009 A • • • Applied new document format Released document under letter revision system Updated Spec number from S71291 to DS75056 Apr 2013 ISBN:978-1-62077-166-2 © 2013 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging. Memory sizes denote raw storage capacity; actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see www.microchip.com. Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com ©2013 Silicon Storage Technology, Inc. DS75056A 15 04/13