Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2 GHz and is fabricated using the latest SiGe HBT 50 GHz FT process, featuring 1 micron emitters with Vceo > 7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125ºC operating range (-40C to +85C) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM and narrowband PCS bands. Isolation vs. Frequency 0 Product Features • DC-4000 MHz Operation • Single Supply Voltage • Excellent Isolation, >50 dB at 900 MHz • 50 Ohms In/Out, Broadband Match for Operation from DC-4 GHz • Unconditionally Stable -2 0 dB -4 0 -6 0 Frequency MHz 6000 3500 2400 1900 900 500 100 -8 0 Applications • Buffer Amplifier for Oscillator Applications • Broadband Gain Blocks • IF Amp Symbol Parameters: Test Conditions: Z0 = 50 Ohms, Id = 8 mA, T = 25ºC P 1dB Output Power at 1dB Compression f = 850 MHz f = 1950 MHz S 21 Small Signal Gain f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 4000 MHz dB dB dB S 12 Reverse Isolation f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 4000 MHz dB dB dB 56.3 40.6 30.8 S11 Input VSWR f = DC - 2400 MHz f = 2400 - 4000 MHz - 1.8:1 1.3:1 S 22 Output VSWR f = DC - 2400 MHz f = 2400 - 4000 MHz - 1.8:1 1.9:1 IP3 Third Order Intercept Point Power out per Tone = -20 dBm f = 850 MHz f = 1950 MHz dB m dB m 2.6 2.8 NF Noise Figure f = DC - 1000 MHz f = 1000 - 2400 MHz dB dB 2.7 2.9 TD Group Delay f = 1000 MHz pS VD Device Voltage Units Min. dB m dB m V Typ. Max. -7.8 -7.4 14.3 15.9 15.2 12.3 82 2.5 2.8 3.1 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100935 Rev A Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier Specification Parameter Bandw idth Frequency Range Device Bias Operating Voltage Operating Current 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation Min Typ. Test Max. Unit 4000 MHz Condition T= 25C DC T= 25C 2.8 8 V mA 16.0 2.7 4.0 -6.9 8.5 61.6 dB dB dB m dB m dB dB 15.7 2.7 2.6 -7.8 8.9 48.4 dB dB dB m dB m dB dB 14.7 3.0 2.8 -7.4 8.8 35.6 dB dB dB m dB m dB dB 14.2 2.8 0.2 -7.0 8.4 33.6 dB dB dB m dB m dB dB T= 25C T= 25C T= 25C T= 25C The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-100935 Rev A Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier Pin # 1 2 3 4 5 6 Function D escription GND C onnecti on to ground. Use vi a holes for best performance to reduce lead i nductance as close to ground leads as possi ble. GND Sames as Pi n 1 RF IN RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. V cc Supply C onnecti on. Thi s pi n should be bypassed wi th a sui table capaci tor(s). GND Sames as Pi n 1 RF OUT RF output and bi as pi n. D C voltage i s present on thi s pi n, therefore a D C blocki ng capaci tor i s necessary for proper operati on. D evice Schematic Application Schematic for +5V Operation at 900 MHz Note: A bias resistor is needed for stability over temperature 1uF 50 ohm microstrip 68pF 270 ohms VCC=+5V 50 ohm microstrip 4 3 6 100pF 1,2,5 100pF Application Schematic for +5V Operation at 1900 MHz 1uF 22pF 270 ohms VCC=+5V 4 50 ohm microstrip 50 ohm microstrip 6 3 68pF 1,2,5 68pF The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-100935 Rev A Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier S21, Id =10mA, T=+25C -1 0 -2 0 dB -2 0 -3 0 -3 0 2400 1900 900 100 500 -4 0 6000 3500 2400 -4 0 1900 6000 -1 0 900 6000 0 500 3500 S22, Id =10mA, T=+25C 0 100 3500 Frequency MHz S11, Id =10mA, T=+25C dB 2400 6000 Frequency MHz 1900 -8 0 900 0 500 -6 0 100 6 3500 dB -4 0 2400 12 1900 -2 0 900 18 500 0 100 dB S12, Id =10mA, T=+25C 24 Frequency MHz Frequency MHz S22, Id=10mA, Ta= +25C S11, Id=10mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-100935 Rev A Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier S21, Id =10mA, T=-40C 6000 6000 100 3500 -4 0 2400 -4 0 1900 -3 0 500 -3 0 6000 dB -2 0 3500 dB -2 0 2400 -1 0 1900 -1 0 900 0 900 S22, Id =10mA, T=-40C S11, Id =10mA, T=-40C 500 3500 Frequency MHz 0 100 2400 6000 Frequency MHz 1900 -8 0 900 0 100 -6 0 3500 6 2400 dB -4 0 1900 dB 1 2 900 -2 0 500 18 100 0 500 S12, Id =10mA, T=-40C 24 Frequency MHz Frequency MHz S22, Id=10mA, T=-40C S11, Id=10mA, T=-40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-100935 Rev A Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier S21, Id =10mA, T=+85C 3500 6000 6000 -4 0 100 2400 -4 0 1900 -3 0 500 -3 0 6000 dB -2 0 3500 dB -2 0 2400 -1 0 1900 -1 0 900 0 900 S22, Id =10mA, T=+85C S11, Id =10mA, T=+85C 500 3500 Frequency MHz 0 100 2400 6000 Frequency MHz 1900 -8 0 900 0 500 -6 0 100 6 3500 dB -4 0 2400 12 1900 -2 0 900 18 500 0 100 dB S12, Id =10mA, T=+85C 24 Frequency MHz Frequency MHz S22, Id=10mA, T=+85C S11, Id=10mA, T=+85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-100935 Rev A Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier Part Number Ordering Information Absolute Maximum Ratings Parameter Value U nit Part Number Reel Siz e Devices/Reel 20 mA SGA-1263-TR1 7" 3000 -40 to +85 C -12 dB m Supply C urrent Operati ng Temperature Maxi mum Input Power Storage Temperature Range -40 to +85 C +125 C Operati ng Juncti on Temperature Recommended Bias Resistor Values Supply 3.6V Voltage(Vs) Caution: Operation of this device above any one of these parameters may cause permanent damage. Appropriate precautions in handling, packaging and testing devices must be observed. Thermal Resistance (Lead-Junction): 255° C/W 6 5 Rbias (Ohms) 4 Pin Designation A12 Package Marking 1 2 3 1 GND 2 GND 3 RF in 4 V cc 5 GND 6 RF out Package Dimensions 7.5V 9V 12V 275 588 775 1150 Note: Pin 1 is on lower left when you can read package marking Pad Layout 0.026 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) 100 5V 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.016 0.425 (0.017) TYP. 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 0.20 (0.0080 0.10 (0.004) 0.30 REF. 10° 0.30 (0.012) 0.10 (0.0040 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-100935 Rev A