RI-UHF-STRAP-08 11-09-22-706 – OCT 2006 UHF Gen2 STRAP FEATURES • Meets EPCGlobal™ Gen2 (v. 1.0.9) and ISO/IEC 18000-6C • 860 ~ 960 MHz Global Operating Frequency • Supports Optional Gen2 Commands: Block Write and Block Erase • 192-bit memory: 96-bit Electronic Product Code (EPC™), 32-bit Access Password, 32bit KILL Password, 32-bit TID memory (Factory Programmed and Locked) • Designed for High-performance, Low Power Consumption based on most Advanced Silicon Process Node for RFID (130 nm) • Fast tag Singulation using most Advanced Anti-Collision Scheme • Suitable for H-field and E-field operation • RoHS Compliant DESCRIPTION Large retailers have issued mandates to their suppliers to ship cases and pallets of goods/products with RFID Smart Labels attached. TI’s Gen2 Straps are intended to simplify the manufacture of inlays for conversion into Smart Labels for various applications. The Straps are based on the EPCGlobal™ Gen2 specification (v. 1.0.9) and ISO/IEC 18000-6C APPLICATIONS • Supply Chain Management & Distribution Logistics • Express Parcel Delivery • Airline Baggage Handling • Asset Tagging TI’s Gen2 Straps operate with extremely low power and yet provide long read and write ranges, fast data transfer and high Smart Label throughput. A detailed description of the command set, memory and operation of the Strap is given in the UHF Gen2 Protocol reference Guide (literature number 11-09-21-700) ORDERING INFORMATION Texas Instruments’ UHF Gen2 Strap is available as listed in Table 1: PART NUMBER RI-UHF-STRAP-08 DESCRIPTION EPCGlobal™ UHF Gen2 Strap Table 1: Part Number Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appear at the end of this data sheet. Copyright © 2006, Texas Instruments Incorporated PRODUCTION DATA Information is current as of publication data. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. WWW.TI.COM 1 RI-UHF-STRAP-08 11-09-22-706 – OCT 2006 ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS (1) PARAMETER NOTES MIN. MAX. UNITS 1 mA Input Current, pad to pad Input voltage to any pad (sustained) Power dissipation Ta = 25ºC Storage Temperature V 1.5 mW Single Strap -40 +85 ºC On Reel -40 +45 ºC Read -40 +65 Write -25 +65 Operating temperature Assembly Survival Temperature 1.5 ºC 1 minute maximum 150 ºC RF Exposure 800 ~ 1000 MHz +10 dBm ESD Immunity CDM 0.5 kV HBM 2.0 kV (1). Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the Strap. These are the stress ratings only and functional operation of the device at these or any other condition beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to absolute maximum rated conditions for extended periods may affect the device reliability RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MINIMUM MAXIMUM UNITS Operating Temperature TA -40 65 ºC Carrier Frequency ƒres 860 960 MHz ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Sensitivity Change in Modulator Reflection Coefficient Data Retension NOTE MINIMUM TYPICAL Reading -9 -13 dBm Programming -6 -9 dBm ∆Γ UNITS > 0.2 tDRET 10 Write and Erase Endurance Strap Parallel Impedance (2) MAXIMUM Years 100,000 Typical Read (-13 dB) Cycles 380 Ohms 2.8 pF (2). The values shown have been taken with a properly designed and matched antenna attached to the strap For complete data on antenna matching, a “UHF Gen2 IC Antenna Reference Guide”. ( 11-07-21-702) is available under NDA 2 WWW.TI.COM RI-UHF-STRAP-08 11-09-22-706 – OCT 2006 MECHANICAL SPECIFICATIONS STRAP MECHANICAL SPECIFICATIONS The mechanical details of each strap is shown below PARAMETER VALUE Substrate thickness (PET) 50 micron (2 mil) Die Height 150 micron (6 mil) Aluminum layer Thickness 10 micron (0.4 mil) Substrate Material PET (Polyethylene Therephthalate) Substrate Elasticity (Young’s Modulus) 2~4 Gpa (290~580 kpsi) Coefficient of Thermal Expansion (CTE) 20~80 ×10-6 ˚C-1 Strap Web Width 9.00 mm ± 0.1 [0.35 inch ± 0.004] 4.00 mm + 0.10 [0.16 in + 0.004 ] Strap Pitch − 0.40 WWW.TI.COM − 0.016 3 RI-UHF-STRAP-08 11-09-22-706 – OCT 2006 STRAP DELIVERY AND FURTHER HANDLING STRAP DELIVERY Straps are delivered on reels of 40,000 units. The reel details are shown below STRAP MARKINGS Ink dots, I mm in diameter are used to indicate the status of each Strap LEADER /TAIL Each reel has 1 m (39”) of chip-less Straps at the start (leader) and end (tail) of each reel. This allows the reel to be loaded onto a conversion machine without any loss of good product. The first and last good Straps are marked with ink dots as shown above. 4 WWW.TI.COM RI-UHF-STRAP-08 11-09-22-706 – OCT 2006 DEFECTIVE STRAPS Each Strap is 100% tested on the production line and any Strap found to be defective is ink marked as shown previously. For each defective Strap found, an additional Strap is added at the end of the good Straps on the reel. SHEAR FORCE LIMITS When handling the Straps, the shear force must not exceed 6 N Shear Force 6 N (1.35 lbf) CHIP AREA PRESSURE 2 During the Strap conversion process, the pressure on the chip must not exceed 10 N/mm . Pressure (per unit die area) 10 N/mm (1450 psi) WARNING EXCESSIVE PRESSURE ON THE CHIP AREA WILL RESULT IN THE CHIP/SUBSTRATE CONDUCTOR CRACKING AND AN EXCESSIVE SHEAR FORCE COULD CAUSE THE CHIP TO SEPARATE FROM THE STRAP TAPE TENSION AND BENDING Three conditions exist and these are shown in the drawing below. Exceeding these limits will result in damage to the Straps. 1 2 1 Linear tension 2 Bending radius (chip bending away from centre of radius) 3 Bending radius (chip bending towards center of radius) 3 2 3 The recommended limits for these conditions are shown in the following table WWW.TI.COM 5 RI-UHF-STRAP-08 11-09-22-706 – OCT 2006 CONDITION LIMIT 1 Maximum Linear Tension 6 N (1.35 lbf) 2 Minimum Bending Radius (away from center) 15 mm (0.6”) 3 Minimum Bending Radius (towards the center) 15 mm (0.6”) ESD PRECAUTIONS During winding and un-winding operations, the Strap tape can become electrostatically charged. The high current density of the electrostatic discharge (ESD) can severely damage the Straps’ chips. The amount of ESD very much depends on the winding speed and tension. We strongly advise that de-ionization equipment is installed at all wind/ un-wind points. PARAMETER ESD Immunity VALUE 2.0 kV (Class 2 Human Body Model) De-ionizer Setting 2 KeV HM STORAGE CONDITIONS Reels should be kept in the original packaging during storage. 6 WWW.TI.COM RI-UHF-STRAP-08 11-09-22-706 – OCT 2006 ANTENNA DESIGN, POSITIONING AND BONDING ANTENNA DESIGN Texas Instruments can help you with a suitable antenna based on a reference design or assist you in a custom (3) design . 1” (25.4 mm) 3½” (88.9 mm) Reference Antenna Design (3). Antenna design is beyond the scope of this document. Further information on antenna design is given in document UHF Gen2 IC Antenna Design Reference Guide (11-07-21-702) which is available under NDA.. PLACEMENT TOLERANCES Texas Instruments’ reference antenna is intended for a 75 micron PET substrate and has placement markings to ensure correct Strap alignment and to aid inspection and qualification. The pads of the Straps must fall within the tolerance marks outlined on the antenna to determine the correct positioning: Upper Y-tolerance Left X-tolerance Right X-tolerance Lower Y-tolerance The drawings below show Straps, whose placement is within tolerance Off center – low and right Off center – high and left Skewed The drawings below show Straps with out-of-tolerance placements WWW.TI.COM 7 RI-UHF-STRAP-08 11-09-22-706 – OCT 2006 Out of vertical tolerance Out of horizontal tolerance Out of skew tolerance NON-TEXAS INSTRUMENTS DESIGN When attaching Straps to non-TI antennas, it is important that 50% of each bonding pad is in contact with the antenna.. The bonding area is shown below. 2.5 × 3 mm Pads ANTENNA SUBSTRATE MATERIALS With Straps, the creation of inlays is made much easier. Antennas can be produced on a variety of substrate materials including direct printing, using conductive inks onto non-conductive materials such as paper, cartons and thin film polymers. Texas Instruments uses PET (Polyethylene Terephthalate) as a substrate. This material is stable, clear, can be printed and has a melting point close to 250 ºC (480 ºF) CREATING THE ANTENNA The antenna tracks (traces) can be formed in a number of ways. These include: • • • Printing using conductive inks. E.g. Silver Etched copper on polymer film Etched aluminum on polymer film STRAP BONDING Bonding of the strap to the antenna can be done using a variety of methods. The techniques include: • • • • Anisotropic Conductive Film Heat curing epoxy UV curing epoxy Ultrasonic welding Customers should contact the supplier or manufacturer of your strap attachment equipment for advice on creating the antenna and the recommended attachment technique and bonding adhesive. 8 WWW.TI.COM RI-UHF-STRAP-08 11-09-22-706 – OCT 2006 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. 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