SSRF4N60 4A , 600 V , RDS(ON) 2.4 Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION ITO-220 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. B N M A H J C L K L D E FEATURES Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. 2 Drain 1 REF. Gate 3 Source A B C D E F G Millimeter Min. Max. 14.60 15.70 9.50 10.50 12.60 14.00 4.30 4.70 2.30 3.2 2.30 2.80 0.30 0.70 G F REF. H J K L M N Millimeter Min. Max. 2.70 3.80 0.90 1.50 0.50 0.90 2.34 2.74 2.40 3.00 φ 3.0 φ 3.4 ABSOLUTE MAXIMUM RATINGS(TC=25°C unless otherwise specified ) Symbol Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 4.0 A Pulsed Drain Current IDM 16 A 33 W 0.26 W / °C EAS 330 mJ EAR 7.3 mJ TJ, Tstg 150,-55~150 °C Parameter Power Dissipation 2 PD Derating factor above 25°C 1 Single Pulsed Avalanche Energy 2 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient RθJA 62.5 Maximum Junction to Case RθJC 3.79 °C / W Notes: 1. L=30mH, IAS=4.4A, VDD=85V, RG=25Ω, Starting TJ=25°C 2. Repetitive Rating: Pulse width limited by maximum junction temperature http://www.SeCoSGmbH.com/ 5-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSRF4N60 4A , 600 V , RDS(ON) 2.4 Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate-Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250µA Drain-Source On-Resistance RDS(ON) - 2.0 2.4 Ω VGS=10V, ID=2A Drain-Sounce Breakdown Voltage BVDSS 600 - - V VGS=0, ID=250µA Zero Gate Voltage Drain Current IDSS - - 10 µA VDS=600V, VGS=0 Gate-Body Leakage Current, Forward IGSSF - - 100 nA VGS=30V, VDS=0 Gate-Body Leakage Current, Reverse IGSSR - - -100 nA VGS= -30V, VDS=0 nC VDS=480V, ID=4.4A, VGS=10V Dynamic Total Gate Charge 1.2 Qg - 19.8 - Qgs - 4 - Qgd - 7.2 - Td(on) - 27 - Tr - 19 - Td(off) - 160 - Tf - 22 - Input Capacitance Ciss - 672 - Output Capacitance Coss - 66 - Reverse Transfer Capacitance Crss - 4.7 - Maximum Continuous Drain-Source Diode Forward Current IS - - 4.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM - - 16 A Drain-Source Diode Forward Voltage VSD - - 1.4 V VGS=0, IS=4.0A Reverse Recovery Time Trr - 300 - nS Qrr - 2.2 - µC VGS=0, IS=4.0A, IF / dt =100A/µs Gate-Source Charge Gate-Drain Charge 1.2 Turn-on Delay Time Rise Time 1.2 1.2 Turn-off Delay Time Fall Time 1.2 1.2 1.2 Reverse Recovery Charge 1 nS pF VDD=300V, ID =4.4A, RG=25Ω VDS=25V, VGS=0, f =1.0MHz Notes: 1. Pulse Test: Pulse width < 300us, Duty cycle ≤ 2%. 2. Basically not affected by working temperature. http://www.SeCoSGmbH.com/ 5-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSRF4N60 Elektronische Bauelemente 4A , 600 V , RDS(ON) 2.4 Ω N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 5-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSRF4N60 Elektronische Bauelemente 4A , 600 V , RDS(ON) 2.4 Ω N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 5-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4