2SC4672 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES z Low Saturation Voltage z Excellent hFE Characteristics z Complements the 2SA1797 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50µA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50µA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA DC current gain hFE VCE=2V, IC=500mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance 82 IC=1A,IB=50mA 0.35 210 MHz VCB=10V, IE=0, f=1MHz 25 pF RANK P Q R RANGE 82–180 120–270 180–390 MARKING DKP DKQ DKR １ JinYu V VCE=2V,IC=0.5A, f=100MHz CLASSIFICATION OF hFE semiconductor 390 www.htsemi.com 2SC4672 300 Ta=100℃ 0.8 hFE 3.6mA 3.2mA 0.6 DC CURRENT GAIN COLLECTOR CURRENT COMMON EMITTER VCE=2V 4.0mA IC (A) COMMON EMITTER Ta=25℃ —— IC hFE Static Characteristic 1.0 2.8mA 2.4mA 0.4 2.0mA 1.6mA 1.2mA 0.2 200 Ta=25℃ 100 0.8mA IB=0.4mA 0.0 0 1 2 3 COLLECTOR-EMITTER VOLTAGE VCEsat 0.5 0 0.1 4 VCE 1 0.3 (V) COLLECTOR CURRENT VBEsat —— IC IC 2 (A) —— IC 1.2 0.4 1.0 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=20 0.3 Ta=100℃ 0.2 Ta=25℃ 0.1 Ta=25℃ 0.8 Ta=100℃ 0.6 0.4 β=20 0.0 0.1 1 0.3 COLLECTOR CURRENT IC COLLECTOR CURRENT —— VBE —— VCB/ VEB Ta=25℃ Cib (pF) 1 Ta=25℃ 0.3 0.6 0.8 1.0 1.2 BASE-EMMITER VOLTAGE VBE (V) PC 600 —— Ta 400 300 200 100 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) Cob 10 1 0.1 0.3 1 REVERSE VOLTAGE 500 0 100 C Ta=100℃ 0.4 2 (A) f=1MHz IE=0/IC=0 CAPACITANCE COLLECTOR CURRENT Cob/ Cib 1000 IC COMMON EMITTER VCE=2V 0.1 0.2 COLLECTOR POWER DISSIPATION PC (mW) 1 0.3 (A) IC (A) 2 IC 0.2 0.1 2 150 3 V 10 (V) 20