T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-54H19 Package Dimensions The MID-54H19 is a photodiode mounted in special Unit : mm ( inches ) dark end look plastic package and suitable for the ψ5.05 (.200) IRED (850nm/880nm) type. 5.47 (.215) 7.62 (.300) 5.90 (.230) 1.00 (.040) Features l High photo sensitivity l Low junction capacitance l High cut-off frequency l Fast switching time l Acceptance angle : 40° FLAT DENOTES CATHOD 23.40MIN. (.920) 0.50TYP. (.020) 1.00MIN. (.040) 2.54 (.100) l C A Application Data communication Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.0 mm (.040") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings o @ TA=25 C Parameter Power Dissipation Maximum Rating Unit 150 mW o o o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55 C to +100 C Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-54H19 Optical-Electrical Characteristics @ TA=25oC Parameter Test Conditions Symbol Min. V(BR)R 30 IR=100µA Reverse Break Down Voltage Type . Max. Unit V Ee=0 VR=10V Reverse Dark Current ID 30 nA Ee=0 λ=850nm Open Circuit Voltage Ee=0.1mW/cm2 VOC 350 Rise Time VR =10V λ=850nm Tr 30 Fall Time RL=50Ω Tf 30 Light Current VR =5V, λ=850nm Ee=0.1mW/cm2 VR =3V, f=1MHZ Total Capacitance IL 7 CT mV nS 12 µA 25 pF Ee=0 Typical Optical-Electrical Characteristic Curves 100 Capacitance C - pF Dark Current - pA 4000 3000 2000 1000 60 40 20 0 0 0 5 10 15 0.01 20 Reverse Voltage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE o 2 TEMP=25 C , Ee=0 mW/cm 0.1 1 10 100 Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE F=1MHZ, Ee=0mW/cm2 1000 Dark Current IR - nA 200 Total Power Dissipation mW 80 150 100 50 0 100 10 1 0.1 0 20 40 60 80 100 o Ambient Temperature - C FIG.3 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE 0 20 40 60 80 100 o Ambient Temperature- C FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE VR=10, Ee=0 mw/cm2 Unity Opto Technology Co., Ltd. 02/04/2002 MID-54H19 Typical Optical-Electrical Characteristic Curves 1000 Ip - µA 80 100 60 Photocurrnet Relative Spectral Sensitivity 100 40 20 0 700 800 900 1000 1100 1200 Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH 10 1 0.1 0.01 0. 1 1 10 Irradiance Ee (mW/cm2) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 850 nm 0° 10° 20° Relative Sensitivity 30° 40° 1.0 0.9 50° 60° 70° 0.8 80° 90° 0.5 0.3 0.1 0.2 0.4 0.6 FIG.7 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002