UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR DESCRIPTION The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, regulators, audio amplifiers, automotive environment. FEATURES * Low Gate Charge * RDS(on) = 0.048 Ω (TYP.) * Avalanche Rugged Technology * 100% Avalanche Tested * Repetitive Avalanche at 100°C * High Current Capability * Operating Temperature: 175°C * Application Oriented Characterization SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 25N06L-TA3-T 25N06G-TA3-T Note: G: Gate, D: Drain, S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-450.a 25N06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) VDS 60 V Drain-Gate Voltage (RGS=20kΩ) VDGR 60 V Gate-Source Voltage VGS ± 20 V TC=25°C 25 A Drain Current (Continuous) ID TC=100°C 17 A Drain Current (Pulsed) (Note 2) IDM 100 A Single Pulse Avalanche Energy EAS 100 mJ (starting TJ =25°C, ID =25A, VDD =25 V) Total Dissipation at TC=25°C PD 90 W Maximum Operating Junction Temperature TJ 175 °C Storage Temperature TSTG -65 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 1.57 UNIT °C/W °C/W 2 of 6 QW-R502-450.a 25N06 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current (VGS=0) IDSS Gate- Source Leakage Current (VDS=0) ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance On State Drain Current Forward Transconductance (Note 1) DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time Cross-Over Time IGSS VGS(TH) RDS(ON) ID(on) gFS CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF tC TEST CONDITIONS ID=250µA, VGS=0V VDS=Max Rating VDS= Max Rating×0.8, TC=125°C VGS=±20V 60 VDS=VGS, ID=250µA VGS=10V, ID=12.5A VDS>ID(on) ×RDS(on)max, VGS=10V VDS>ID(on) ×RDS(on)max, ID=12.5A 2 VGS=0V, VDS=25V, f=1MHz VDD=40V, VGS=10V, ID=25A VDD=30V, ID=3A, RG=50Ω, VGS=10V VDD=40V, ID=25A, RG=50Ω, VGS=10V VDD=40V, ID=25A, RG=50Ω, VGS=10V SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=25A, VGS=0V (Note 1) Reverse Recovery Time tRR ISD=25A, di/dt=100A/µs, Reverse Recovery Charge QRR VDD=30V, TJ=150°C Reverse Recovery Current IRRM Source-Drain Current ISD Source-Drain Current (Pulsed) (Note 2) ISDM Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%. 2. Pulse width limited by safe operating area Turn-on Current Slope (di/dt)on UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 1 10 ±100 25 7 2.9 4 0.048 0.065 11 µA nA V Ω A S 700 320 90 900 450 150 pF pF pF 26 8 9 30 90 80 80 170 40 nC nC nC ns ns ns ns ns 45 130 120 120 250 A/µs 230 1.5 V 25 100 ns µC A A A 80 0.22 5.5 3 of 6 VER.a 25N06 Preliminary Power MOSFET SWITCHING TIME TEST CIRCUIT V(BR)DSS VD IDM ID VDD VDD Fig. 2 Unclamped Inductive Waveforms RL VD D.U.T. RG VGS PW 2200µF 3.3µF VDD Fig. 3. Switching Times Test Circuits For Resistive Load UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 VER.a 25N06 Preliminary Power MOSFET SWITCHING TIME TEST CIRCUIT (Cont.) 12V VDD 47kΩ 1kΩ 100nF VI=20V=VGMAX 2200µF IG=CONST 100Ω D.U.T. 2.7kΩ VG 47kΩ 1kΩ PW Fig. 4 Gate Charge Test Circuit 3.3µF A MOS D DIODE G 25Ω A A FAST DIODE L=100µH 1000µF B S B D B D.U.T. G VDD S RG + 85Ω - Fig. 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 VER.a 25N06 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 VER.a