2N7002T N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead(Pb)-Free 1. GATE 2. SOURCE 1 2 3. DRAIN SOT-523(SC-75) FEATURES: * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switching Cell Phones, Pagers Maximum Ratings (TA=25°C unless otherwise specified) Characteristic Symbol Values Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V 115 mA Total Power Dissipation ID PD 150 mW Junction temperature Range Tj 150 °C Storage Temperature Range Tstg -55 to +150 °C Drain Current Device Marking 2N7002T = K72 WEITRON http://www.weitron.com.tw 1/4 17-Sep-09 2N7002T ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min V(BR)DSS 60 - - V Vth(GS) 1 - 2 V Gate-body Leakage* VGS=±20V, VDS=0V IGSS - - ±10 nA Zero Gate Voltage Drain Current VGS=0V, VDS=60V IDSS - - 1 µA On-state Drain Current VGS=10V, VDS=7.5V ID(ON) 500 1000 - mA Drain-Source On-Resistance VGS=5V, ID=50mA VGS=10V, ID=500mA RDS(on) - 2.0 4.4 7.5 13.5 Ω Forward Tranconductance VDS=10V, ID=200mA gfs 80 - - ms Input Capacitance VDS=25V, VGS=0V, f=1MHz Ciss - 22 50 Output Capacitance VDS=25V, VGS=0V, f=1MHz Coss - 11 25 Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHz Crss - 2 5 Turn-on Time VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RGEN=25Ω TD(on) - 7 20 VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RGEN=25Ω T - Drain-Source Breakdown Voltage VGS=0V,ID=10µA Gate-Threshold Voltage VDS=VGS, ID=250µA Typ Max Unit pF SWITCHING WEITRON http://www.weitron.com.tw 2/4 ns 11 20 17-Sep-09 2N7002T Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 17-Sep-09 2N7002T Unit:mm SOT-523 Outline Dimensions SOT-523 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 4/4 Min 0.30 0.70 1.45 0.15 0.80 1.40 0.00 0.70 0.37 0.10 Max 0.50 0.90 1.75 0.50 0.40 1.00 1.80 0.10 1.00 0.48 0.25 17-Sep-09