WEITRON 2N7002T

2N7002T
N-Channel ENHANCEMENT MODE
POWER MOSFET
3
P b Lead(Pb)-Free
1. GATE
2. SOURCE
1
2
3. DRAIN
SOT-523(SC-75)
FEATURES:
* Fast Switching Speed
* Low On-Resistance
* Low Voltage Driver
APPLICATIONS:
* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
Maximum Ratings (TA=25°C unless otherwise specified)
Characteristic
Symbol
Values
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
115
mA
Total Power Dissipation
ID
PD
150
mW
Junction temperature Range
Tj
150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Drain Current
Device Marking
2N7002T = K72
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17-Sep-09
2N7002T
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min
V(BR)DSS
60
-
-
V
Vth(GS)
1
-
2
V
Gate-body Leakage*
VGS=±20V, VDS=0V
IGSS
-
-
±10
nA
Zero Gate Voltage Drain Current
VGS=0V, VDS=60V
IDSS
-
-
1
µA
On-state Drain Current
VGS=10V, VDS=7.5V
ID(ON)
500
1000
-
mA
Drain-Source On-Resistance
VGS=5V, ID=50mA
VGS=10V, ID=500mA
RDS(on)
-
2.0
4.4
7.5
13.5
Ω
Forward Tranconductance
VDS=10V, ID=200mA
gfs
80
-
-
ms
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
Ciss
-
22
50
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Coss
-
11
25
Reverse Transfer Capacitance
VDS=25V, VGS=0V, f=1MHz
Crss
-
2
5
Turn-on Time
VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RGEN=25Ω
TD(on)
-
7
20
VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RGEN=25Ω
T
-
Drain-Source Breakdown Voltage
VGS=0V,ID=10µA
Gate-Threshold Voltage
VDS=VGS, ID=250µA
Typ
Max
Unit
pF
SWITCHING
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ns
11
20
17-Sep-09
2N7002T
Typical Characteristics
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2N7002T
Unit:mm
SOT-523 Outline Dimensions
SOT-523
A
B
TOP VIEW
Dim
A
B
C
D
E
G
H
J
K
L
M
C
D
E
G
H
K
J
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L
M
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Min
0.30
0.70
1.45
0.15
0.80
1.40
0.00
0.70
0.37
0.10
Max
0.50
0.90
1.75
0.50
0.40
1.00
1.80
0.10
1.00
0.48
0.25
17-Sep-09