WTC9435 P-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT -5.3 AMPERES P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE Features: 2 * Super High Dense Cell Design For Low RDS(on) RDS(on) < 100mΩ @ VGS = -4.5V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package SOURCE 3 1 2 Applications: SOT-23 * Power Management in Notebook Computer * Portable Equipment * Battery Powered System Maximum Ratings (TA Rating Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID -5.3 A Pulsed Drain Current1 IDM -20 A Total Power Dissipation (TA=25°C) (TA=75°C) PD 2.5 1.2 W Maximum Junction-Case RθJC 24 °C/W Maximum Junction-Ambient2 RθJA 62.5 °C/W TJ -55~+150 °C Tstg -55~+150 °C Continuous Drain Current Operating Junction Temperature Range Storage Temperature Range Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Device Marking WTC9435 = P94 WEITRON http://www.weitron.com.tw 1/4 17-Aug-09 WTC9435 Electrical Characteristics (TA=25°C Unless Otherwise Specified) Characteristic Symbol Min Typ Max Unit V(BR)DSS -30 - - V VGS (th) -1.0 -1.7 -3.0 V Gate-Source Leakage Current +20V VDS=0V, VGS=- IGSS - - +100 - nA Zero Gate Voltage Drain Current VDS=-24V, VGS=0V IDSS - - -1 µA Drain-Source On-Resistance VGS=-4.5V, ID=-4.2A VGS=-10V , ID=-5.3A R DS(on) - 70 50 100 70 mΩ Forward Transconductance VDS=-10V, ID=-5.3A gfs - 10 - S Ciss - 745 - Coss - 440 - Crss - 120 - Turn-On Delay Time(2) VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω td(on) - 9 - nS Rise Time VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω tr - 15 - nS - 75 - nS Static Drain-Source Breakdown Voltage VGS=0V, ID=-250µA Gate-Source Threshold Voltage VDS=VGS, ID=-250µA Dynamic Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHZ PF Switching Turn-O Time VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω t ) Fall Time VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω tf - 40 - nS Total Gate Charge(2) VDS=-15V, ID=-5.3A,VGS=-10V Qg - 28 - nc Gate-Source Charge VDS=-15V, ID=-5.3A,VGS=-10V Qgs - 3 - nc Gate-Drain Charge VDS=-15V, ID=-5.3A,VGS=-10V Qgd - 7 - nc Drain-Source Diode Forward Voltage(2) VGS=0V, IS=-2.6A VSD - - -1.3 V Continuous Source Current (Body Diode) IS - - -2.6 A Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad. WEITRON http://www.weitron.com.tw 2/4 17-Aug-09 WTC9435 TYPICAL ELECTRICAL CHARACTERISTICS WEITRON http://www.weitron.com.tw 3/4 17-Aug-09 WTC9435 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 4/4 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 17-Aug-09