IRF640 N-Channel Enhancement Mode POWER MOSFET DRAIN CURRENT 18 AMPERES 3 DRAIN P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE 200 VOLTAGE 1 GATE Features: *Super High Dense Cell Design For Low R DS(ON) 2 SOURCE R DS(ON) <0.18Ω@V GS =10V * * * * * Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speed Linear Transfer Characteristics High Input Impedance 1 2 3 1. GATE 2. DRAIN 3. SOURCE TO-220AB Maximum Ratings(Ta=25 C Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 ID 18 11 IDM 72 Total Power Dissipation(TC=25˚C) PD 125 W Thermal Resistance Junction-case RθJC 1 ˚C/W Thermal Resistance Junction-ambient RθJA 62 ˚C/W Operating Junction Temperature Range TJ +150 ˚C Storage Temperature Range Tstg - 55~+150 ˚C Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current WEITRON http://www.weitron.com.tw 1/6 Unit V A 04-Nov-08 IRF640 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max Drain-Source Breakdown Voltage ID=250µA,VGS=0 BVDSS 200 - - Gate-Source Threshold Voltage ID=250µA,VDS=VGS VGS(Th) 2.0 - 4.0 IGSS - - ±100 - - 25 Unit Static V Gate-Source Leakage current VGS=±20V Drain-SourceLeakage Current(Tj=25˚C) VDS=200V,VGS=0 Drain-SourceLeakage Current(Tj=125˚C) VDS=160V,VGS=0 nA μA IDSS - - 250 RDS(on) - - 0.18 Ω Forward Transconductance ID=11A,VDS=50V gfs 6.7 - - S Forward On Voltage IS=18A, VGS=0V,Tj=25˚C VSD - - 2.0 V Input Capacitance VGS=0V,VDS=25V,f=1.0MHz Ciss - 1300 - Output Capacitance VGS=0V,VDS=25V,f=1.0MHz Coss - 430 - Reverse Transfer Capacitance VGS=0V,VDS=25V,f=1.0MHz Crss - 130 - Turn-on Delay Time ID=18A, VDD=100V,RGS=9.1Ω,RL=5.4Ω Td(on) - - 21 Rise Time ID=18A, VDD=100V,RGS=9.1Ω,R L=5.4Ω Tr - - 77 Turn-off Delay Time ID=18A, VDD=100V,RGS=9.1Ω,R L=5.4Ω Td(off) - - 68 Static Drain-Source On-Resistance ID=11A,VGS=10V Dynamic pF Switching WEITRON http://www.weitron.com.tw 2/6 ns 04-Nov-08 IRF640 WEITRON http://www.weitron.com.tw 3/6 04-Nov-08 IRF640 Characteristics Curve WEITRON http://www.weitron.com.tw 4/6 04-Nov-08 IRF640 WEITRON http://www.weitron.com.tw 5/6 04-Nov-08 IRF640 TO-220AB Outline Dimensions Unit:mm TO-220AB Dim A B C D E F H I J K L M O I B O DIA J M 2 C A 1 2 3 E K D H L F WEITRON http://www.weitron.com.tw 6/6 Min 14.68 9.78 5.02 13.06 3.57 2.42 0.72 4.22 1.14 2.20 0.33 2.48 3.70 Max 15.32 10.42 6.52 14.62 4.07 2.66 0.96 4.98 1.36 2.97 0.55 2.98 3.90 04-Nov-08