NTE491T MOSFET N−Ch, Enhancement Mode High Speed Switch TO237 Type Package Features: D Zener Diode Input Protected D Low On−Resistance D Ultralow Threshold D Low Input Characteristics D Low Input and Output Leakage Applications: D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc, D Battery Operated Systems D Solid−State Relays D Inductive Load Drivers D G S Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15/−0.3V Drain Current, ID Continuous (TJ = +1505C) TA = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mA TA = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation, PD TA = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TA = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction−to−Ambient, Rth (JA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1255C/W Rev. 12−13 Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 − − V 0.8 − 2.5 V Static Characteristics Drain−Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS = 0, ID = 1005 A VGS(Th) ID = 1mA, VDS = VGS Gate−Body Leakage Current IGSS VGS = 15V, VDS = 0 − − 100 nA Zero−Gate−Voltage Drain Current IDSS VDS = 48V, VGS = 0 − − 10 5A VDS = 48V, VGS = 0, TJ = +1255C − − 500 mA 750 − − mA VGS = 10V, ID = 500mA − − 5.0 3 VGS = 10V, ID = 500mA, TJ = +1255C − − 6.0 3 7.5 3 ON−State Drain Current Drain−Source ON Resistance Id(on) rDS(on) VGS = 10V, VDS = 10V, Note 1 VGS = 5V, ID = 200mA Forward Transconductance gfs VDS = 10V, ID = 500mA 100 − − mS Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1MHZ − − 60 pF Output Capacitance Coss − − 25 pF Reverse Transfer Capacitance Crss − − 5 pF − − 10 ns − − 10 ns Dynamic Characteristics Switching Characteristics (Note 2) Turn−On Time Turn−Off Time tON tOFF VDD = 15V, RL = 233 , ID = 600mA, VGEN = 10V, RG = 253 Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%. Note 2. Switching time is essentially independent of operating temperature. .200 (5.08) .180 (4.57) .100 (2.54) SGD .180 (4.57) .594 (15.09) .018 (0.46) .015 (0.38) .050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R