C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-Free TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous PD Total Device Dissipation TJ, Tstg Junction and Storage Temperature 3.BASE 1 2 3 150 mA 400 mW -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol Parameter unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100 uA, IC=0 5 V Collector cut-off current ICBO VCB= 60 V, IE=0 0.1 uA Collector cut-off current ICEO VCE= 50 V, IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5 V, IC=0 0.1 uA DC current gain hFE(1) VCE= 6 V, Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB= 10 mA 0.25 V Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 10mA 1 V fT Transition frequency Collector Output Capacitance Cob Noise Figure NF CLASSIFICATION OF Rank Range WEITRON http://www.weitron.com.tw IC= 2mA VCE= 10 V, IC= 1mA f=30MHz VCB=10V,IE=0 f=1MHZ VCE= 6 V, IC=0.1 mA f =1KHz,RG=10K 70 700 80 MHz 3.5 pF 10 dB hFE(1) O Y GR BL 70-140 120-240 200-400 350-700 1/2 23-Nov-06 C1815 Typical Characteristics WEITRON http://www.weitron.com.tw 2/2 23-Nov-06