WEITRON KTA1266

WEITRON
KTA1266
PNP Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES :
• Excellent hFE Linearity
•� Low noise
TO-92
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Value
-50
-50
-5
-0.15
625
150
Tstg
Storage Temperature
Units
V
V
V
A
mW
℃
℃
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= -100μA, I E =0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1m A, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -50V, I E=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
μA
hFE(1)
VCE= -6V,IC= -2mA
70
hFE(2)
VCE= -6V,IC= -150mA
25
400
DC current gain
Collector-emitter saturation voltage
VCE(sat)
I C= -100mA,IB= -10 mA
-0.3
V
Base-emitter saturation voltage
VBE(sat)
I C= -100mA,IB= -10 mA
-1.1
V
Transition frequency
fT
VCE= -10V, IC= -1mA
Collector output capacitance
Cob
VCB= -10V,IE=0, f=1MHz
Noise figure
NF
VCE= -6V, Ic= -0.1mA,
f=1KHZ, Rg=10KΩ
CLASSIFICATION OF
Rank
Range
80
MHz
7
pF
10
dB
hFE(1)
O
70 - 140
V
GR
120 - 240
200 - 400
Marking
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KTA1266
Typical Characteristics
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KTA1266
TO-92 Outline Dimensions
unit:mm
E
H
Dim
A
B
C
D
E
G
H
J
K
L
L
C
J
K
Min
Max
3.70
3.30
1.40
1.10
0.55
0.38
0.51
0.36
4.70
4.40
3.43
4.70
4.30
1.270TYP
2.44
2.64
14.10
14.50
D
A
B
G
TO-92
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