JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 3DK2222A Plastic-Encapsulate Transistors TO-92 TRANSISTOR(NPN ) 1. EMITTER FEATURE Power dissipation PCM : 2. BASE 0.625 W(Tamb=25℃) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PD Total Device Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Junction and Storage Temperature -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Symbol unless Test otherwise specified) conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 10uA , IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10uA, IC=0 6 V Collector cut-off current ICBO VCB= 60 V , IE=0 10 nA Collector cut-off current ICEX VCE= 60 V , VEB(OFF)=3V 10 nA Emitter cut-off current IEBO VEB= 3 V , 10 nA hFE(1) VCE=10 V, IC= 150mA 100 hFE(2) VCE=10 V, IC= 0.1mA 40 hFE(3) VCE=10 V, IC= 500mA 42 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IC=0 VCE(sat)(1) IC= 500 mA, IB= 50 mA 0.6 V VCE(sat)(2) IC= 150 mA, IB= 15 mA 0.3 V VBE(sat) IC= 500 mA, IB= 50 mA 1.2 V 225 ns Storage time tstg VCC=30V, IC=150mA, IB1=IB2=15mA Transition frequency fT VCE= 20 V, IC= 20mA, f = 100MHz 300 CLASSIFICATION OF hFE(1) Rank Range 300 L H 100-200 200-300 MHz Typical Characteristics 3DK2222A