WEITRON 2SD1899

2SD1899
NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
2
3
D-PAK(TO-252)
Symbol
Value
Units
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
Collector Current -Continuous
IC
3
A
Collector Power Dissipation
PC
1
W
Junction Temperature
TJ
150
℃
Storage Temperature
Tstg
-55-150
℃
Parameter
1
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
60
-
-
V
Collector-emitter breakdown voltage
V(BR)CEO
IC =1mA,IB=0
60
-
-
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
7
-
-
V
Collector cut-off current
ICBO
VCB=60V,IE=0
-
-
10
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
-
-
10
μA
hFE(1)
VCE=2V,IC=200mA
60
-
-
hFE(2)
VCE=2V,IC=600mA
100
-
400
hFE(3)
VCE=2V,IC=2A
50
-
-
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC=1.5A,IB=150mA
-
-
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC=1.5A,IB=150mA
-
-
1.2
V
VCE=5V,IC=1.5A
-
120
-
MHz
VCB=10V,IE=0,f=1MHz
-
30
-
pF
-
-
0.5
-
-
2.0
-
-
0.5
fT
Transition frequency
Cob
Collector output capacitance
Switching Time
Turn on Time
ton
Storage Time
tstg
tf
Fall Time
CLASSIFICATION OF
Rank
Range
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VCC=10V,IC=1A,IB1=-IB2=-0.1A
μs
hFE(2)
M
L
K
100-200
160-320
200-400
1/4
13-Oct-08
2SD1899
Typical Characteristics
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2/4
13-Oct-08
2SD1899
Typical Characteristics
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13-Oct-08
2SD1899
TO-252 Outline Dimensions
unit:mm
E
A
G
4
H
TO-252
Dim
A
B
C
D
E
G
H
J
K
L
M
J
1
2
3
B
M
K
D
C
WEITRON
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L
4/4
Min
6.40
9.00
0.50
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
13-Oct-08