A1015 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V Collector Current Continuous IC -150 mA Total Device Dissipation TA=25°C PD 0.4 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 to + 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage, IC = -100µA, IE = 0 V(BR)CBO - -50 V Collector-Emitter Breakdown Voltage, IC = -0.1mA, IB = 0 V(BR)CEO - -50 V Emitter-Base Breakdown Voltage, IE = -100µA, IC = 0 V(BR)EBO - -5.0 V Collector Cut-off Current, VCB = -50V, IE = 0 ICBO - -0.1 µA Collector Cut-off Current, VCE = -50V, IB = 0 ICEO - -0.1 µA Emitter Cut-off Current, VEB = -5.0V, IC = 0 IEBO - -0.1 µA OFF CHARACTERISTICS WEITRON http://www.weitron.com.tw 1/4 14-Feb-06 A1015 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Typ Max Unit Symbol Min hFE1 70 - 400 - Collector-Emitter Saturation Voltage IC=-100mA, IB =-10mA VCE(sat) - - -0.3 V Base-Emitter Voltage IC=-100mA, IB =-10mA VBE(sat) - - -1.1 V fT 80 - - MHz Cob - 19 - pF NF - - 6 dB Characteristics ON CHARACTERISTICS DC Current Gain VCE =-6.0V, I C =-2.0mA TransitionFrequence VCE = -10V, IC = -1mA, f = 30MHz Collector Output Capacitance VCB = -10V, IE = 0, f = 1MHz Noise Figure VCE = -6V, I C = -0.1mA, Rg = 10kΩ, f = 1KMHz CLASSIFICATION OF hFE1 Rank O Y GR Range 70-140 120-240 200-400 WEITRON http://www.weitron.com.tw 2/4 14-Feb-06 A1015 Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 14-Feb-06 A1015 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 D A B G TO-92 WEITRON http://www.weitron.com.tw 4/4 14-Feb-06