WEITRON SS8050LT1_09

SS8050LT1
NPN General Purpose Transistors
3
P b Lead(Pb)-Free
1
2
SOT-23
V CEO
Value
25
40
5.0
1500
300
2.4
417
25
0.1
40
100
5.0
100
O
E=20 Vdc, I E= 0 )
35
4.0
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0.15
u
0.15
u
0.15
u
Rev.A 10-Apr-09
SS8050LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Min
Max
Unit
120
600
-
VCE(sat)
-
0.5
Vdc
fT
100
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC=100 mAdc, VCE=1.0 Vdc)
hFE (1)
Collector-Emitter Saturation Voltage
(IC=800 mAdc, IB=80mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC=50 mAdc, VCE=10 Vdc, f=30MHz)
-
MHz
CLASSIFICATION OF hFE(1)
Rank
P
Q
R
S
Range
120-200
150-300
200-400
300-600
Marking
1HA
1HC
1HE
1HG
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Rev.A 10-Apr-09
1000
0.5
VCE = 1V
IB = 3.0mA
0.4
IB = 2.5mA
hFE, DC CURRENT GAIN
I C , CO LLECTOR CURRENT (mA)
SS8050LT1
IB = 2.0mA
0.3
IB = 1.5mA
0.2
IB = 1.0mA
0.1
100
10
IB = 0.5mA
0.4
0.8
1.2
1.6
1
0.1
2.0
1
10
100
1000
VCE , C OLLECTOR-EMITTER VOLTAGE (VoLTS)
I C , COLLECTOR CURRENT (mA)
FIG.1 Static Characteristic
FIG.2 DC Current Gain
10000
100
I C , COLLECTOR CURRENT (mA)
VBE(s at), VCE(s at) , SATURATION VOLTAGE (mA)
0
IC = 10 IB
V BE(sat)
1000
100
V CE(sat)
10
0.1
1
10
100
VCE = 1V
10
1
0.1
0.0
1000
0.2
I C , COLLECTOR CURRENT (mA)
0.6
0.8
1.0
1.2
VBE, BASE- EMITTER VOLTAGE (VoLTS)
FIG.4 Base-Emitter On Voltage
FIG.3 Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
fT , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
0.4
1000
VCE = 10V
100
10
1
1
10
100
400
I C , COLLECTOR CURRENT
FIG.5 Current Gain Bandwidth Product
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Rev.A 10-Apr-09
SS8050LT1
SOT-23 Outline Dimension
SOT-23
Dim
A
B
C
D
E
G
H
J
K
L
M
A
B
TOP VIEW
C
D
E
G
H
K
J
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L
M
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Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
Rev.A 10-Apr-09