SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 O E=20 Vdc, I E= 0 ) 35 4.0 WEITRON http://www.weitron.com.tw 1/4 0.15 u 0.15 u 0.15 u Rev.A 10-Apr-09 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Max Unit 120 600 - VCE(sat) - 0.5 Vdc fT 100 Symbol ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=1.0 Vdc) hFE (1) Collector-Emitter Saturation Voltage (IC=800 mAdc, IB=80mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=50 mAdc, VCE=10 Vdc, f=30MHz) - MHz CLASSIFICATION OF hFE(1) Rank P Q R S Range 120-200 150-300 200-400 300-600 Marking 1HA 1HC 1HE 1HG WEITRON http://www.weitron.com.tw 2/4 Rev.A 10-Apr-09 1000 0.5 VCE = 1V IB = 3.0mA 0.4 IB = 2.5mA hFE, DC CURRENT GAIN I C , CO LLECTOR CURRENT (mA) SS8050LT1 IB = 2.0mA 0.3 IB = 1.5mA 0.2 IB = 1.0mA 0.1 100 10 IB = 0.5mA 0.4 0.8 1.2 1.6 1 0.1 2.0 1 10 100 1000 VCE , C OLLECTOR-EMITTER VOLTAGE (VoLTS) I C , COLLECTOR CURRENT (mA) FIG.1 Static Characteristic FIG.2 DC Current Gain 10000 100 I C , COLLECTOR CURRENT (mA) VBE(s at), VCE(s at) , SATURATION VOLTAGE (mA) 0 IC = 10 IB V BE(sat) 1000 100 V CE(sat) 10 0.1 1 10 100 VCE = 1V 10 1 0.1 0.0 1000 0.2 I C , COLLECTOR CURRENT (mA) 0.6 0.8 1.0 1.2 VBE, BASE- EMITTER VOLTAGE (VoLTS) FIG.4 Base-Emitter On Voltage FIG.3 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 0.4 1000 VCE = 10V 100 10 1 1 10 100 400 I C , COLLECTOR CURRENT FIG.5 Current Gain Bandwidth Product WEITRON http://www.weitron.com.tw 3/4 Rev.A 10-Apr-09 SS8050LT1 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 4/4 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 Rev.A 10-Apr-09