C945 NPN Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 0.4 Junction Temperature Tj +150 °C Storage Temperature TSTG -40 to + 150 °C WEITRON 1/4 http://www.weitron.com.tw 08-Feb-06 C945 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Typ Max Unit Symbol Min hFE1 hFE2 70 40 - 700 - Collector-Emitter Saturation Voltage IC=100mA, IB=10mA VCE(sat) - - 0.3 V Base-Emitter Voltage IC=100mA, IB=10mA VBE(sat) - - 1.0 V TransitionFrequence VCE = 6V, IC = 10mA, f = 30MHz fT 200 - - MHz Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz Cob - - 3.0 pF Noise figure VCE = 6V, IC = 0.1mA, Rg = 10kΩ, f = 1KMHz NF - 4.0 10 dB Characteristics ON CHARACTERISTICS DC Current Gain VCE=6.0V, IC=1mA VCE=6.0V, IC=0.1mA CLASSIFICATION OF hFE1 Rank O Y GR BL Range 70-140 120-240 200-400 350-700 WEITRON http://www.weitron.com.tw 2/4 08-Feb-06 C945 FIG1. Total Power Dissipation vs Ambient Temperature FIG.2 Collector Current vs Collector to Emitter Voltage FIG.3 Collector and Bade Saturation Voltage vs Collector Current WEITRON http://www.weitron.com.tw FIG.4 Gain Bandwidth Product vs Emitter Current 3/4 08-Feb-06 C945 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 D A B G TO-92 WEITRON http://www.weitron.com.tw 4/4 08-Feb-06