WEITRON S8050

S8050
NPN General Purpose Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Total Device Dissipation TA=25 C
PD
Junction Temperature
Tj
Storage, Temperature
Tstg
Unit
Vdc
Vdc
Vdc
mAdc
Value
25
40
5.0
500
0.625
W
150
C
C
-55 to +150
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0)
V(BR)CEO
25
-
Vdc
Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0)
V(BR)CBO
40
-
Vdc
Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0)
V(BR)EBO
5.0
Collector Cutoff Current (VCE= 20 Vdc, I B =0)
ICE0
-
0.1
uAdc
Collector Cutoff Current (VCB= 40 Vdc, IE=0)
ICBO
-
0.1
uAdc
Emitter Cutoff Current (VEB= 3.0Vdc, I C =0)
IEBO
-
0.1
uAdc
WEITRON
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-
Vdc
S8050
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Symbol
Min
TYP
Max
Unit
DC Current Gain
(IC= 50 Adc, VCE=1.0 Vdc)
hFE (1)
85
-
300
-
DC Current Gain
(IC= 500 mAdc, VCE= 1.0 Vdc)
hFE (2)
50
-
-
-
Collector-Emitter Saturation Voltage
(IC= 500 Adc, IB= 50 mAdc)
VCE(sat)
-
-
0.6
Vdc
Base-Emitter Saturation Voltage
(IC= 500 mAdc, IB= 50 mAdc)
VBE(sat)
-
-
1.2
Vdc
fT
150
-
-
MHz
Characteristics
ON CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC= 20 mAdc, VCE=6.0 Vdc, f=30MHz)
Classification of hFE(1)
Rank
B
C
Range
85-160
120-200
WEITRON
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D
160-300
S8050
WEITRON
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S8050
unit:mm
TO-92 Outline Dimensions
E
H
TO-92
Dim
A
B
C
D
E
G
H
J
K
L
L
C
J
K
D
A
B
G
WEITRON
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Min
Max
3.70
3.30
1.40
1.10
0.55
0.38
0.51
0.36
4.70
4.40
3.43
4.70
4.30
1.270TYP
2.44
2.64
14.10
14.50