WSD520G Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 100m AMPERES 30 VOLTS P b Lead(Pb)-Free Feature: * Ultra Small mold type * Low IR * High Reliability 1 2 Description: Low current rectification SOD-723 SOD-723 Outline Dimensions A SOD-723 −X− −Y− B D 2X 0.08 X Y Dim A B C D E J K Min 0.95 0.55 0.49 0.25 0.15 0.08 1.35 Max 1.05 0.65 0.55 0.32 0.25 0.15 1.45 PIN 1. CATHODE 2. ANODE C SOLDERING FOOTPRINT 1.1 J WEITRON http://www.weitron.com.tw 0.45 E K 0.50 1/ SCALE 10:1 21-Oct-2010 WSD520G Maximum Ratings (TA=25˚C Unless otherwise noted) Characteristic DC Reverse Voltage Peak Forward Surge Current Operation Junction Temperature Range Storage Temperature Range Electrical Characteristics Symbol Value Unit VR 30 V IO 100 mA IFSM 500 mA TJ 125 ˚C Tstg -40 to +125 ˚C (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Forward Voltage IF=10mA VF - - 0.45 V Reverse Leakage VR=10V IR - - 0.5 µA Device Marking Item Marking WSD520G E WEITRON http://www.weitron.com.tw Eqivalent Circuit diagram 1 2/ 2 21-Oct-2010 WSD520G Electrical Characteristic Curves 1000000 1 Ta=-25℃ Ta=25℃ 0.1 0.01 100000 Ta=75℃ 10000 1000 Ta=25℃ 100 Ta=-25℃ 10 1 0.001 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 20 30 0 Ta=25℃ VR=10V n=30pcs 340 330 AVE:338.8mV 800 19 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 900 350 700 600 500 400 300 AVE:100.5nA 200 17 16 15 14 13 12 11 0 10 VF DISPERSION MAP AVE:15.94pF Ct DISPERSION MAP IR DISPERSION MAP 10 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 1cyc Ifsm 15 8.3ms 10 AVE:3.90A 5 0 Ifsm 8.3ms 8.3ms 1cyc 5 Ifsm t 5 0 0 1 10 1 100 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 0.1 1000 20 Ta=25℃ f=1MHz VR=0V n=10pcs 18 100 320 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 1000 Ta=25℃ IF=10mA n=30pcs REVERSE CURRENT:IR(nA) 0.02 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IF=100mA IM=10mA 1m FORWARD POWER DISSIPATION:Pf(W) 0.08 DC REVERSE POWER DISSIPATION:PR (W) FORWARD VOLTAGE:VF(mV) 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 370 360 10 1 0 600 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 10 100 Ta=125℃ f=1MHｚ Ta=125℃ 100 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) (TA =25°C) D=1/2 0.06 Sin(θ＝180) 0.04 0.02 time 0.015 0.01 DC 0.005 D=1/2 Sin(θ＝180) 300u 10 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS WEITRON http://www.weitron.com.tw 1000 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 3/4 0.2 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 21-Oct-2010 WSD520G 0.3 0A 0V 0.2 DC Io t T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0A 0V 0.2 Io t DC T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) WEITRON http://www.weitron.com.tw 0 125 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 4/4 21-Oct-2010