BC807-16W BC807-25W BC807-40W General Purpose Transistor PNP Silicon COLLECTOR 3 P b Lead(Pb)-Free 3 1 BASE 1 2 EMITTER 2 SOT-323(SC-70) MaximumRatings (TA=25°Cunless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V Collector Current-Continuous IC 500 mA Total Device Dissipation FR-5 Board(1) TA=25°C PD 150 mW RθJA 833 °C/W Junction Temperature Range TJ -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Rating Thermal Resistance, Junctionto Ambient(1) Device Marking BC807-16W = 5A , BC807-25W = 5B , BC807-40W = 5C 1. FR-5 = 1.0 x 0.75 x 0.062 in. WEITRON http://www.weitron.com.tw 1/3 25-Nov-08 BC807-16W BC807-25W BC807-40W WEITRON Electrical Characteristics(TA=25ºC Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage IC=-10mA V(BR)CEO -45 - - V Collector-Base Breakdown Voltage IC=-10µA V(BR)CBO -50 - - V Emitter-Base Breakdown Voltage IE=-1.0µA V(BR)EBO -5.0 - - V ICBO - - -0.1 µA ICBO - - -0.2 µA ICBO - - -0.1 µA hFE 100 160 250 - 250 400 600 40 - - Off Characteristics VCB=-20V VCE =-20V VEB =-5V On Characteristics DC Current Gain IC=-100mA, VCE=-1.0V BC807-16W BC807-25W BC807-40W IC=-500mA,VCE=-1.0V) - Collector-Emitter Saturation Voltage IC=-500mA, IB=-50mA VCE(sat) - - -0.7 V Base-Emitter On Voltage IC=-500mA, VCE=-1.0V VBE(on) - - -1.2 V fT 80 - - MHz Cob - - 10 pF Small-signal Characteristics Current-Gain-Band width Product IC=-10mA, VCE=-5.0V, f=100MHz Output Capacitance VCB=-10V,f=1.0MHz WEITRON http://www.weitron.com.tw 2/3 25-Nov-08 BC807-16W BC807-25W BC807-40W WEITRON SOT-323 Outline Demensions Unit:mm A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 3/3 Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 25-Nov-08